Datasheet

IRG4PC40SPbF
www.irf.com 5
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0
1000
2000
3000
4000
1 10 100
CE
C, Capacitance (pF)
V , Collector-to-Em itter Volta
g
e
(
V
)
A
V = 0V , f = 1MHz
C = C + C , C SHOR TED
C = C
C = C + C
GE
ies ge gc ce
res gc
oes ce gc
C
ies
C
res
C
oes
0
4
8
12
16
20
0 20 40 60 80 100 120
GE
V , Gate-to-Emitter Voltage (V)
g
Q , Total Gate Char
g
e
(
nC
)
A
V = 400V
I = 31A
CE
C
7.3
7.4
7.5
7.6
7.7
7.8
0 102030405060
G
Total Switching Losses (mJ)
R , Gate Resistance (
Ω
)
A
V = 480V
V = 15V
T = 25°C
I = 31A
CC
GE
J
C
1
10
100
-60 -40 -20 0 20 40 60 80 100 120 140 160
Total Switching Losses (mJ)
R = 10
Ω
V = 15V
V = 480V
A
T , Junction Tem
p
erature
(
°C
)
J
I = 62A
I = 31A
I = 16A
G
GE
CC
C
C
C