Datasheet

IRG4BC30UDPbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) ---- 50 75 I
C
= 12A
Qge Gate - Emitter Charge (turn-on) ---- 8.1 12 nC V
CC
= 400V See Fig. 8
Q
gc
Gate - Collector Charge (turn-on) ---- 18 27 V
GE
= 15V
t
d(on)
Turn-On Delay Time ---- 40 ---- T
J
= 25°C
t
r
Rise Time ---- 21 ---- ns I
C
= 12A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time ---- 91 140 V
GE
= 15V, R
G
= 23Ω
t
f
Fall Time ---- 80 130 Energy losses include "tail" and
E
on
Turn-On Switching Loss ---- 0.38 ---- diode reverse recovery.
E
off
Turn-Off Switching Loss ---- 0.16 ---- mJ See Fig. 9, 10, 11, 18
E
ts
Total Switching Loss ---- 0.54 0.9
t
d(on)
Turn-On Delay Time ---- 40 ---- T
J
= 150°C, See Fig. 9, 10, 11, 18
t
r
Rise Time ---- 22 ---- ns I
C
= 12A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time ---- 120 ---- V
GE
= 15V, R
G
= 23Ω
t
f
Fall Time ---- 180 ---- Energy losses include "tail" and
E
ts
Total Switching Loss ---- 0.89 ---- mJ diode reverse recovery.
L
E
Internal Emitter Inductance ---- 7.5 ---- nH Measured 5mm from package
C
ies
Input Capacitance ---- 1100 ---- V
GE
= 0V
C
oes
Output Capacitance ---- 73 ---- pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance ---- 14 ---- ƒ = 1.0MHz
t
rr
Diode Reverse Recovery Time ---- 42 60 ns T
J
= 25°C See Fig.
---- 80 120 T
J
= 125°C 14 I
F
= 12A
I
rr
Diode Peak Reverse Recovery Current ---- 3.5 6.0 A T
J
= 25°C See Fig.
---- 5.6 10 T
J
= 125°C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge ---- 80 180 nC T
J
= 25°C See Fig.
---- 220 600 T
J
= 125°C 16 di/dt 200A/µs
di
(rec)M
/dt Diode Peak Rate of Fall of Recovery ---- 180 ---- A/µs T
J
= 25°C See Fig.
During t
b
---- 120 ---- T
J
= 125°C 17
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 ---- ---- V V
GE
= 0V, I
C
= 250µA
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage ---- 0.63 ---- V/°C V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage ---- 1.95 2.1 I
C
= 12A V
GE
= 15V
---- 2.52 ---- V I
C
= 23A See Fig. 2, 5
---- 2.09 ---- I
C
= 12A, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 ---- 6.0 V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage ---- -11 ---- mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance  3.1 8.6 ---- S V
CE
= 100V, I
C
= 12A
I
CES
Zero Gate Voltage Collector Current ---- ---- 250 µA V
GE
= 0V, V
CE
= 600V
---- ---- 2500 V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
FM
Diode Forward Voltage Drop ---- 1.4 1.7 V I
C
= 12A See Fig. 13
---- 1.3 1.6 I
C
= 12A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current ---- ---- ±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)