Datasheet

ManualsBrandsIR ManualsDiscrete SemiconductorsIGBT TO-220AB 600 V 23 A

IRG4BC30UDPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

n-channel

CES

= 600V

CE(on) typ.

= 1.95V

= 15V, I

= 12A

Parameter Min. Typ. Max. Units

θJC

Junction-to-Case - IGBT ------ ------ 1.2

θJC

Junction-to-Case - Diode ------ ------ 2.5 °C/W

θCS

Case-to-Sink, flat, greased surface ------ 0.50 ------

θJA

Junction-to-Ambient, typical socket mount ----- ----- 80

Wt Weight ------ 2 (0.07) ------ g (oz)

Thermal Resistance

UltraFast CoPack IGBT

11/3/03

Absolute Maximum Ratings

Parameter Max. Units

CES

Collector-to-Emitter Voltage 600 V

@ T

= 25°C Continuous Collector Current 23

@ T

= 100°C Continuous Collector Current 12

Pulsed Collector Current  92 A

Clamped Inductive Load Current  92

@ T

= 100°C Diode Continuous Forward Current 12

Diode Maximum Forward Current 92

Gate-to-Emitter Voltage ± 20 V

@ T

= 25°C Maximum Power Dissipation 100

@ T

= 100°C Maximum Power Dissipation 42

Operating Junction and -55 to +150

STG

Storage Temperature Range °C

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Benefits

• Generation -4 IGBT's offer highest efficiencies

available

• IGBTs optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBTs . Minimized recovery characteristics require

less/no snubbing

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBTs

PD-94810

-22

www.irf.com 1

• Lead-Free

• UltraFast: Optimized for high operating

frequencies 8-40 kHz in hard switching, >200

kHz in resonant mode

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

• IGBT co-packaged with HEXFRED

ultrafast,

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

• Industry standard TO-220AB package

Summary of content (10 pages)

PAGE 1
PD-94810 IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package • Lead-Free C
PAGE 2
IRG4BC30UDPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Collector-to-Emitter Breakdown Voltage 600 ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---VCE(on) Collector-to-Emitter Saturation Voltage ---------VGE(th) Gate Threshold Voltage 3.0 ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---gfe Forward Transconductance 3.
PAGE 3
IRG4BC30UDPbF Load Current ( A ) 16 Duty cycle: 50% TJ = 125°C T sink = 90°C Gate drive as specified Turn-on losses include effects of reverse recovery 12 Power Dissipation = 21W 60% of rated voltage 8 I 4 A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 TJ = 25°C TJ = 150°C 10 1 VGE = 15V 20µs PULSE WIDTH A 0.1 0.1 1 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.
PAGE 4
IRG4BC30UDPbF VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A 3.0 25 V GE = 15V 20 15 10 5 V GE = 15V 80µs PULSE WIDTH IC = 24A 2.5 IC = 12A 2.0 I C = 6.0A A 1.5 A 0 25 50 75 100 125 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) 150 TC , Case Temperature (°C) Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature Thermal Response (Z thJC ) 10 1 D = 0.
PAGE 5
IRG4BC30UDPbF 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 1600 VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 2000 Cies 1200 800 Coes 400 Cres A 0 1 10 VCE = 400V I C = 12A 16 12 8 4 A 0 100 0 10 VCE, Collector-to-Emitter Voltage (V) 10 Total Switchig Losses (mJ) Total Switchig Losses (mJ) 0.56 0.54 0.52 A 0.50 0 10 20 30 40 50 R G, Gate Resistance ( Ω ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.
PAGE 6
IRG4BC30UDPbF 1000 1.6 I C , Collector-to-Emitter Current (A) R G = 23 Ω T J = 150°C V CC = 480V V GE = 15V 1.2 0.8 0.4 A 0.0 0 10 20 VGE = 20V GE TJ = 125°C 100 SAFE OPERATING AREA 10 1 0.1 1 30 10 100 1000 VCE , Collector-to-Emitter Voltage (V) IC , Collector-to-Emitter Current (A) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Instantaneous Forward Current - I F (A) Total Switchig Losses (mJ) 2.
PAGE 7
IRG4BC30UDPbF 100 160 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 120 I IRRM - (A) t rr - (ns) I F = 24A I F = 12A 80 I F = 6.0A I F = 24A I F = 12A 10 IF = 6.0A 40 0 100 di f /dt - (A/µs) 1 100 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt di f /dt - (A/µs) 1000 Fig. 15 - Typical Recovery Current vs.
PAGE 8
IRG4BC30UDPbF 90% Vge +Vge Same type device as D.U.T. Vce Ic 90% Ic 10% Vce Ic 430µF 80% of Vce 5% Ic D.U.T. td(off) tf Eoff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1+5µS Vce ic dt t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T.
PAGE 9
IRG4BC30UDPbF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 18 . 18 ' D.U.T. L 1000V Vc* RL= 0 - 480V 480V 4 X IC @25°C 50V 6000µF 100V 19. www.irf.com 20.
PAGE 10
IRG4BC30UDPbF Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10µH, RG = 23Ω (figure 19) Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.