Datasheet

IRFP3710PbF
S
D
G
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 100   V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient  0.12  V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance   0.025 V
GS
= 10V, I
D
= 28A
V
GS(th)
Gate Threshold Voltage 2.0  4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 20   S V
DS
= 25V, I
D
= 28A
  25
µA
V
DS
= 100V, V
GS
= 0V
  250 V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage   100 V
GS
= 20V
Gate-to-Source Reverse Leakage   -100
nA
V
GS
= -20V
Q
g
Total Gate Charge   190 I
D
= 28A
Q
gs
Gate-to-Source Charge   26 nC V
DS
= 80V
Q
gd
Gate-to-Drain ("Miller") Charge   82 V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time  14  V
DD
= 50V
t
r
Rise Time  59  I
D
= 28A
t
d(off)
Turn-Off Delay Time  58  R
G
= 2.5
t
f
Fall Time  48  R
D
= 1.7Ω, See Fig. 10
Between lead,
 
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance  3000  V
GS
= 0V
C
oss
Output Capacitance  640  pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance  330   = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance  
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
28A, di/dt 460A/µs, V
DD
V
(BR)DSS
,
T
J
175°C
Notes:
Starting T
J
= 25°C, L = 1.4mH
R
G
= 25, I
AS
= 28A. (See Figure 12)
Pulse width 300µs; duty cycle 2%.
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
 
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
 
p-n junction diode.
V
SD
Diode Forward Voltage   1.3 V T
J
= 25°C, I
S
= 28A, V
GS
= 0V
t
rr
Reverse Recovery Time  210 320 ns T
J
= 25°C, I
F
= 28A
Q
rr
Reverse RecoveryCharge  1.7 2.6 µC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
57
180
A