Datasheet
IRFP3710PbF
S
D
G
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 100 V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient 0.12 V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance 0.025 Ω V
GS
= 10V, I
D
= 28A
V
GS(th)
Gate Threshold Voltage 2.0 4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 20 S V
DS
= 25V, I
D
= 28A
25
µA
V
DS
= 100V, V
GS
= 0V
250 V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage 100 V
GS
= 20V
Gate-to-Source Reverse Leakage -100
nA
V
GS
= -20V
Q
g
Total Gate Charge 190 I
D
= 28A
Q
gs
Gate-to-Source Charge 26 nC V
DS
= 80V
Q
gd
Gate-to-Drain ("Miller") Charge 82 V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time 14 V
DD
= 50V
t
r
Rise Time 59 I
D
= 28A
t
d(off)
Turn-Off Delay Time 58 R
G
= 2.5Ω
t
f
Fall Time 48 R
D
= 1.7Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance 3000 V
GS
= 0V
C
oss
Output Capacitance 640 pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance 330 = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ 28A, di/dt ≤ 460A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Notes:
Starting T
J
= 25°C, L = 1.4mH
R
G
= 25Ω, I
AS
= 28A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage 1.3 V T
J
= 25°C, I
S
= 28A, V
GS
= 0V
t
rr
Reverse Recovery Time 210 320 ns T
J
= 25°C, I
F
= 28A
Q
rr
Reverse RecoveryCharge 1.7 2.6 µC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
57
180
A








