Datasheet

IRFB7437PbF
www.irf.com 3
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Units
gfs Forward Transconductance 160 ––– ––– S
Q
g
Total Gate Charge ––– 150 225 nC
Q
gs
Gate-to-Source Charge ––– 41 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 51 –––
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
)
–––99–––
t
d(on)
Turn-On Delay Time ––– 19 ––– ns
t
r
Rise Time ––– 70 –––
t
d(off)
Turn-Off Delay Time ––– 78 –––
t
f
Fall Time ––– 53 –––
C
iss
Input Capacitance ––– 7330 ––– pF
C
oss
Output Capacitance ––– 1095 –––
C
rss
Reverse Transfer Capacitance ––– 745 –––
C
oss
eff. (ER)
Effective Output Capacitance (Energy Related)
i
––– 1310 –––
C
oss
eff. (TR)
Effective Output Capacitance (Time Related)
h
––– 1735 –––
Diode Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current ––– –––
250
c
A
(Body Diode)
I
SM
Pulsed Source Current ––– ––– 1000 A
(Body Diode)
d
V
SD
Diode Forward Voltage ––– 1.0 1.3 V
dv/dt
Peak Diode Recovery f
––– 3.1 ––– V/ns
t
rr
Reverse Recovery Time ––– 30 ––– ns
T
J
= 25°C V
R
= 34V,
–––30–––
T
J
= 125°C I
F
= 100A
Q
rr
Reverse Recovery Charge ––– 24 ––– nC
T
J
= 25°C
di/dt = 100A/μs
g
–––25–––
T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 1.3 ––– A
T
J
= 25°C
T
J
= 175°C, I
S
= 100A, V
DS
= 40V
g
I
D
= 30A
R
G
= 2.7
V
DD
= 20V
Conditions
V
GS
= 10V
g
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0 MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 32V
i
, See Fig. 11
V
GS
= 0V, V
DS
= 0V to 32V
h
T
J
= 25°C, I
S
= 100A, V
GS
= 0V
g
integral reverse
p-n junction diode.
MOSFET symbol
showing the
V
GS
= 10V
g
I
D
= 100A, V
DS
=20V, V
GS
= 10V
Conditions
V
DS
= 10V, I
D
= 100A
I
D
= 100A
V
DS
=20V
D
S
G