Datasheet
IRFB7437PbF
2 www.irf.com
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.069mH
R
G
= 25, I
AS
= 100A, V
GS
=10V.
I
SD
100A, di/dt 1166A/μs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width 400μs; duty cycle 2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
This value determined from sample failure population,
starting T
J
= 25°C, L=0.095mH, R
G
= 25, I
AS
= 100A, V
GS
=10V
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 1.5 2.0
m
––– 1.8 –––
V
GS(th)
Gate Threshold Voltage 2.2 3.0 3.9 V
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 μA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
R
G
Internal Gate Resistance ––– 2.2 –––
V
GS
= 10V, I
D
= 100A
V
DS
= V
GS
, I
D
= 150μA
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 6.0V, I
D
= 50A
V
GS
= 20V
V
GS
= -20V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
d
Absolute Maximum Ratings
Symbol
Parameter
Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
I
DM
Pulsed Drain Current
d
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
E
AS
(tested)
Single Pulse Avalanche Energy Tested Value
k
I
AR
Avalanche Current
d
A
E
AR
Repetitive Avalanche Energy
d
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case
j –––
0.65
R
CS
Case-to-Sink, Flat Greased Surface
0.50 –––
R
JA
Junction-to-Ambient
j ––– 62
500
-55 to + 175
± 20
1.5
10lbf
x
in (1.1N
x
m)
Max.
250
c
180
1000
195
°C/W
A
°C
300
350
See Fig. 14, 15, 22a, 22b
230
3.0