Datasheet

IRF9Z34NPbF
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
 
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
 
p-n junction diode.
V
SD
Diode Forward Voltage   -1.6 V T
J
= 25°C, I
S
= -10A, V
GS
= 0V
t
rr
Reverse Recovery Time  54 82 ns T
J
= 25°C, I
F
= -10A
Q
rr
Reverse RecoveryCharge  110 160 nC di/dt = -100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -55   V V
GS
= 0V, I
D
= -250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient  -0.05  V/°C Reference to 25°C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance   0.10 V
GS
= -10V, I
D
= -10A
V
GS(th)
Gate Threshold Voltage -2.0  -4.0 V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance 4.2   S V
DS
= 25V, I
D
= -10A
  -25
µA
V
DS
= -55V, V
GS
= 0V
  -250 V
DS
= -44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage   100 V
GS
= 20V
Gate-to-Source Reverse Leakage   -100
nA
V
GS
= -20V
Q
g
Total Gate Charge   35 I
D
= -10A
Q
gs
Gate-to-Source Charge   7.9 nC V
DS
= -44V
Q
gd
Gate-to-Drain ("Miller") Charge   16 V
GS
= -10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time  13  V
DD
= -28V
t
r
Rise Time  55  I
D
= -10A
t
d(off)
Turn-Off Delay Time  30  R
G
= 13
t
f
Fall Time  41  R
D
= 2.6Ω, See Fig. 10
Between lead,
 
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance  620  V
GS
= 0V
C
oss
Output Capacitance  280  pF V
DS
= -25V
C
rss
Reverse Transfer Capacitance  140   = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance  
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
-10A, di/dt -290A/µs, V
DD
V
(BR)DSS
,
T
J
175°C
Notes:
Starting T
J
= 25°C, L = 3.6mH
R
G
= 25, I
AS
= -10A. (See Figure 12)
Pulse width 300µs; duty cycle 2%.
S
D
G
Source-Drain Ratings and Characteristics
A
S
D
G
-19
-68