Datasheet

IRF7832
2 www.irf.com
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆Β
V
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.023 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 3.1 4.0
mΩ
––– 3.7 4.8
V
GS(th)
Gate Threshold Voltage 1.39 ––– 2.32 V
∆
V
GS(th)
Gate Threshold Voltage Coefficient ––– 5.7 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 µA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 77 ––– ––– S
Q
g
Total Gate Charge ––– 34 51
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 8.6 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 2.9 ––– nC
Q
gd
Gate-to-Drain Charge ––– 12 –––
Q
godr
Gate Charge Overdrive ––– 10.5 ––– See Fig. 16
Q
sw
Switch Char
g
e (Q
gs2
+ Q
gd
)
–––14.9–––
Q
oss
Output Charge ––– 23 ––– nC
R
g
Gate Resistance ––– 1.2 2.4 Ω
t
d(on)
Turn-On Delay Time ––– 12 –––
t
r
Rise Time ––– 6.7 –––
t
d(off)
Turn-Off Delay Time ––– 21 ––– ns
t
f
Fall Time –––13–––
C
iss
Input Capacitance ––– 4310 –––
C
oss
Output Capacitance ––– 990 ––– pF
C
rss
Reverse Transfer Capacitance ––– 450 –––
Avalanche Characteristics
Parameter Units
E
AS
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
gy
d
mJ
I
AR
A
va
l
anc
h
e
C
urrent
c
A
Diode Characteristics
Parameter Min. T
y
p. Max. Units
I
S
Continuous Source Current ––– ––– 3.1
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 160
(
Bod
y
Diode
)
c
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 41 62 ns
Q
rr
Reverse Recovery Charge ––– 39 59 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
I
D
= 16A
V
GS
= 0V
V
DS
= 15V
V
GS
= 4.5V, I
D
= 16A
e
V
GS
= 4.5V
Typ.
–––
V
DS
= V
GS
, I
D
= 250µA
Clamped Inductive Load
V
DS
= 15V, I
D
= 16A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
T
J
= 25°C, I
F
= 16A, V
DD
= 10V
di/dt = 100A/
µ
s
e
T
J
= 25°C, I
S
= 16A, V
GS
= 0V
e
showing the
integral reverse
p-n junction diode.
MOSFET symbol
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 16A
V
DS
= 15V
V
GS
= 20V
V
GS
= -20V
V
DS
= 24V, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 20A
e
Conditions
Max.
260
16
ƒ = 1.0MHz