Datasheet

IRF7389PbF
4 www.irf.com
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
N-Channel
R
DS
(on) , Drain-to-Source On Resistance (Ω)
R
DS
(on) , Drain-to-Source On Resistance (Ω)
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
5.8A
0.020
0.024
0.028
0.032
0.036
0.040
0 10203040
A
I , Drain Current (A)
D
V = 10V
GS
V = 4.5V
GS
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0 3 6 9 12 15
A
GS
V , Gate-to-Source Voltage (V)
I = 5.8A
D
0
40
80
120
160
200
25 50 75 100 125 150
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
I
TOP 1.8A
3.2A
BOTTOM 4.0A
D
I
D