Datasheet

IRF7389PbF
2 www.irf.com
 Surface mounted on FR-4 board, t ≤ 10sec.
Parameter Min. Typ. Max. Units Conditions
N-Ch 30   V
GS
= 0V, I
D
= 250µA
P-Ch -30   V
GS
= 0V, I
D
= -250µA
N-Ch  0.022  Reference to 25°C, I
D
= 1mA
P-Ch  0.022  Reference to 25°C, I
D
= -1mA
 0.023 0.029 V
GS
= 10V, I
D
= 5.8A 
 0.032 0.046 V
GS
= 4.5V, I
D
= 4.7A 
 0.042 0.058 V
GS
= -10V, I
D
= -4.9A 
 0.076 0.098 V
GS
= -4.5V, I
D
= -3.6A 
N-Ch 1.0   V
DS
= V
GS
, I
D
= 250µA
P-Ch -1.0   V
DS
= V
GS
, I
D
= -250µA
N-Ch  14  V
DS
= 15V, I
D
= 5.8A 
P-Ch  7.7  V
DS
= -15V, I
D
= -4.9A 
N-Ch   1.0 V
DS
= 24V, V
GS
= 0V
P-Ch   -1.0 V
DS
= -24V, V
GS
= 0V
N-Ch   25 V
DS
= 24V, V
GS
= 0V, T
J
= 55°C
P-Ch   -25 V
DS
= -24V, V
GS
= 0V, T
J
= 55°C
I
GSS
Gate-to-Source Forward Leakage N-P   ±100 V
GS
= ±20V
N-Ch  22 33
P-Ch  23 34
N-Ch  2.6 3.9
P-Ch  3.8 5.7
N-Ch  6.4 9.6
P-Ch  5.9 8.9
N-Ch  8.1 12
P-Ch  13 19
N-Ch  8.9 13
P-Ch  13 20
N-Ch  26 39
P-Ch  34 51
N-Ch  17 26
P-Ch  32 48
N-Ch  650 
P-Ch  710 
N-Ch  320  pF
P-Ch  380 
N-Ch  130 
P-Ch  180 
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
V/°C
Ω
V
S
µA
nC
ns
N-Channel
I
D
= 5.8A, V
DS
= 15V, V
GS
= 10V

P-Channel
I
D
= -4.9A, V
DS
= -15V, V
GS
= -10V
N-Channel
V
DD
= 15V, I
D
= 1.0A, R
G
= 6.0Ω,
R
D
= 15Ω

P-Channel
V
DD
= -15V, I
D
= -1.0A, R
G
= 6.0Ω,
R
D
= 15Ω
N-Channel
V
GS
= 0V, V
DS
= 25V,  = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -25V,  = 1.0MHz
N-Ch
P-Ch
Parameter Min. Typ. Max. Units Conditions
N-Ch   2.5
P-Ch   -2.5
N-Ch   30
P-Ch   -30
N-Ch  0.78 1.0 T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V 
P-Ch  -0.78 -1.0 T
J
= 25°C, I
S
= -1.7A, V
GS
= 0V 
N-Ch  45 68
P-Ch  44 66
N-Ch  58 87
P-Ch  42 63
Source-Drain Ratings and Characteristics
I
S
Continuous Source Current (Body Diode)
I
SM
Pulsed Source Current (Body Diode) 
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
A
V
ns
nC
N-Channel
T
J
= 25°C, I
F
=1.7A, di/dt = 100A/µs
P-Channel 
T
J
= 25°C, I
F
= -1.7A, di/dt = 100A/µs
 N-Channel I
SD
≤ 4.0A, di/dt ≤ 74A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 150°C
P-Channel I
SD
≤ -2.8A, di/dt ≤ 150A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 150°C
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 22 )
Notes:
 Pulse width ≤ 300µs; duty cycle ≤ 2%.
 N-Channel Starting T
J
= 25°C, L = 10mH R
G
= 25Ω, I
AS
= 4.0A. (See Figure 12)
P-Channel Starting T
J
= 25°C, L = 35mH R
G
= 25Ω, I
AS
= -2.8A.
nA