Datasheet

IRF7343PbF
4 www.irf.com
0 10 20 30 40
0.040
0.060
0.080
0.100
0.120
R , Drain-to-Source On Resistance
I , Drain Current (A)
D
DS (on)
VGS = 10V
VGS = 4.5V
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
N-Channel
(Ω)
R
DS(on)
, D
ra
in
-to
-S
o
u
rc
e
O
n
R
e
s
is
ta
n
c
e
( Ω )
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
4.7A
25 50 75 100 125 150
0
40
80
120
160
200
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
I
D
TOP
BOTTOM
2.1A
3.8A
4.7A
0.04
0.06
0.08
0.10
0.12
0246810
A
GS
V , Gate-to-Source Voltage (V)
I = 4.7A
D