Datasheet

IRF7343PbF
2 www.irf.com
 Surface mounted on FR-4 board, t ≤ 10sec.
Parameter Min. Typ. Max. Units Conditions
N-Ch 55   V
GS
= 0V, I
D
= 250µA
P-Ch -55   V
GS
= 0V, I
D
= -250µA
N-Ch  0.059  Reference to 25°C, I
D
= 1mA
P-Ch  0.054  Reference to 25°C, I
D
= -1mA
 0.043 0.050 V
GS
= 10V, I
D
= 4.7A 
 0.056 0.065 V
GS
= 4.5V, I
D
= 3.8A 
 0.095 0.105 V
GS
= -10V, I
D
= -3.4A 
 0.150 0.170 V
GS
= -4.5V, I
D
= -2.7A 
N-Ch 1.0   V
DS
= V
GS
, I
D
= 250µA
P-Ch -1.0   V
DS
= V
GS
, I
D
= -250µA
N-Ch 7.9   V
DS
= 10V, I
D
= 4.5A 
P-Ch 3.3   V
DS
= -10V, I
D
= -3.1A 
N-Ch   2.0 V
DS
= 55V, V
GS
= 0V
P-Ch   -2.0 V
DS
= -55V, V
GS
= 0V
N-Ch   25 V
DS
= 55V, V
GS
= 0V, T
J
= 55°C
P-Ch   -25 V
DS
= -55V, V
GS
= 0V, T
J
= 55°C
I
GSS
Gate-to-Source Forward Leakage N-P   ±100 V
GS
= ±20V
N-Ch  24 36
P-Ch  26 38
N-Ch  2.3 3.4
P-Ch  3.0 4.5
N-Ch  7.0 10
P-Ch  8.4 13
N-Ch  8.3 12
P-Ch  14 22
N-Ch  3.2 4.8
P-Ch  10 15
N-Ch  32 48
P-Ch  43 64
N-Ch  13 20
P-Ch  22 32
N-Ch  740 
P-Ch  690 
N-Ch  190  pF
P-Ch  210 
N-Ch  71 
P-Ch  86 
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
V/°C
Ω
V
S
µA
nC
ns
N-Channel
I
D
= 4.5A, V
DS
= 44V, V
GS
= 10V

P-Channel
I
D
= -3.1A, V
DS
= -44V, V
GS
= -10V
N-Channel
V
DD
= 28V, I
D
= 1.0A, R
G
= 6.0Ω,
R
D
= 16Ω

P-Channel
V
DD
= -28V, I
D
= -1.0A, R
G
= 6.0Ω,
R
D
= 16Ω
N-Channel
V
GS
= 0V, V
DS
= 25V,  = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -25V,  = 1.0MHz
N-Ch
P-Ch
Parameter Min. Typ. Max. Units Conditions
N-Ch   2.0
P-Ch   -2.0
N-Ch   38
P-Ch   -27
N-Ch  0.70 1.2 T
J
= 25°C, I
S
= 2.0A, V
GS
= 0V 
P-Ch  -0.80 -1.2 T
J
= 25°C, I
S
= -2.0A, V
GS
= 0V 
N-Ch  60 90
P-Ch  54 80
N-Ch  120 170
P-Ch  85 130
Source-Drain Ratings and Characteristics
I
S
Continuous Source Current (Body Diode)
I
SM
Pulsed Source Current (Body Diode) 
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
A
V
ns
nC
N-Channel
T
J
= 25°C, I
F
=2.0A, di/dt = 100A/µs
P-Channel 
T
J
= 25°C, I
F
= -2.0A, di/dt = 100A/µs
 N-Channel I
SD
≤ 4.7A, di/dt ≤ 220A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 150°C
P-Channel I
SD
≤ -3.4A, di/dt ≤ -150A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 150°C
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 22 )
Notes:
 Pulse width ≤ 300µs; duty cycle ≤ 2%.
 N-Channel Starting T
J
= 25°C, L = 6.5mH R
G
= 25Ω, I
AS
= 4.7A.
P-Channel Starting T
J
= 25°C, L = 20mH R
G
= 25Ω, I
AS
= -3.4A.
nA