Datasheet

IRF7105
2 www.irf.com
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Q
g
Total GateCharge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Parameter Min. Typ. Max. Units Conditions
N-Ch 25   V
GS
= 0V, I
D
= 250µA
P-Ch -25   V
GS
= 0V, I
D
= -250µA
N-Ch  0.030  Reference to 25°C, I
D
= 1mA
P-Ch  -0.015  Reference to 25°C, I
D
= -1mA
 0.083 0.10 V
GS
= 10V, I
D
= 1.0A 
 0.14 0.16 V
GS
= 4.5V, I
D
= 0.50A 
 0.16 0.25 V
GS
= -10V, I
D
= -1.0A 
 0.30 0.40 V
GS
= -4.5V, I
D
= -0.50A 
N-Ch 1.0  3.0 V
DS
= V
GS
, I
D
= 250µA
P-Ch -1.0  -3.0 V
DS
= V
GS
, I
D
= -250µA
N-Ch  4.3  V
DS
= 15V, I
D
= 3.5A 
P-Ch  3.1  V
DS
= -15V, I
D
= -3.5A 
N-Ch   2.0 V
DS
= 20V, V
GS
= 0V
P-Ch   -2.0 V
DS
= -20V, V
GS
= 0V,
N-Ch   25 V
DS
= 20V, V
GS
= 0V, T
J
= 55°C
P-Ch   -25 V
DS
= -20V, V
GS
= 0V, T
J
= 55°C
I
GSS
Gate-to-Source Forward Leakage N-P   ±100 V
GS
= ± 20V
N-Ch  9.4 27
P-Ch  10 25
N-Ch  1.7 
P-Ch  1.9 
N-Ch  3.1 
P-Ch  2.8 
N-Ch  7.0 20
P-Ch  12 40
N-Ch  9.0 20
P-Ch  13 40
N-Ch  45 90
P-Ch  45 90
N-Ch  25 50
P-Ch  37 50
L
D
Internal Drain Inductace N-P  4.0  Between lead , 6mm (0.25in.)from
L
S
Internal Source Inductance N-P  6.0  package and center of die contact
N-Ch  330 
P-Ch  290 
N-Ch  250 
P-Ch  210 
N-Ch  61 
P-Ch  67 
Parameter Min. Typ. Max. Units Conditions
N-Ch   2.0
P-Ch   -2.0
N-Ch   14
P-Ch   -9.2
N-Ch   1.2 T
J
= 25°C, I
S
= 1.3A, V
GS
= 0V 
P-Ch   -1.2 T
J
= 25°C, I
S
= -1.3A, V
GS
= 0V 
N-Ch  36 54
P-Ch  69 100
N-Ch  41 75
P-Ch  90 180
t
on
Forward Turn-On Time N-P
 Repetitive rating; pulse width limited by
max. junction temperature.
 Pulse width ≤ 300µs; duty cycle ≤ 2%.
Notes:
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Source-Drain Ratings and Characteristics
V
V/°C
Ω
V
S
µA
nC
ns
nH
pF
N-Channel
I
D
= 2.3A, V
DS
= 12.5V, V
GS
= 10V

P-Channel
I
D
= -2.3A, V
DS
= -12.5V, V
GS
= -10V
N-Channel
V
DD
= 25V, I
D
= 1.0A, R
G
= 6.0Ω,
R
D
= 25Ω

P-Channel
V
DD
= -25V, I
D
= -1.0A, R
G
= 6.0Ω,
R
D
= 25Ω
N-Channel
V
GS
= 0V, V
DS
= 15V,  = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -15V,  = 1.0MHz
N-Ch
P-Ch
I
S
Continuous Source Current (Body Diode)
I
SM
Pulsed Source Current (Body Diode) 
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
A
V
ns
nC
N-Channel
T
J
= 25°C, I
F
= 1.3A, di/dt = 100A/µs
P-Channel 
T
J
= 25°C, I
F
= -1.3A, di/dt = 100A/µs
Intrinsic turn-on time is neglegible (turn-on is dominated by L
S
+L
D
)
 N-Channel I
SD
≤ 3.5A, di/dt ≤ 90A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 150°C
P-Channel I
SD
≤ -2.3A, di/dt ≤ 90A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 150°C
 Surface mounted on FR-4 board, t ≤ 10sec.