Datasheet
www.irf.com 2
IRF640NPbF/SPbF/LPbF
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 11A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 167 251 ns T
J
= 25°C, I
F
= 11A
Q
rr
Reverse Recovery Charge ––– 929 1394 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
18
72
A
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 200 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.25 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.15 Ω V
GS
= 10V, I
D
= 11A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 6.8 ––– ––– S V
DS
= 50V, I
D
= 11A
––– ––– 25
µA
V
DS
= 200V, V
GS
= 0V
––– ––– 250 V
DS
= 160V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
V
GS
= -20V
Q
g
Total Gate Charge ––– ––– 67 I
D
= 11A
Q
gs
Gate-to-Source Charge ––– ––– 11 nC V
DS
= 160V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 33 V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 10 ––– V
DD
= 100V
t
r
Rise Time ––– 19 ––– I
D
= 11A
t
d(off)
Turn-Off Delay Time ––– 23 ––– R
G
= 2.5Ω
t
f
Fall Time ––– 5.5 ––– R
D
= 9.0Ω, See Fig. 10
Between lead,
––– –––
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 1160 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 185 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 53 ––– pF ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance ––– –––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.0
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
R
θJA
Junction-to-Ambient (PCB mount) ––– 40