Datasheet

IRF5210S/LPbF
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
-V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 25 50 75 100 125 150
Q
G
, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
-
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= -80V
V
DS
= -50V
V
DS
= -20V
I
D
= -23A
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
-V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
-
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
GS
= 0V
1 10 100 1000
-V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
Tc = 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec