Datasheet

IRF5210
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
1000
2000
3000
4000
5000
6000
1 10 100
C, Capacitance (pF)
A
DS
-V , Drain-to-Source Volta
g
e
(
V
)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 40 80 120 160 200
G
GS
A
-V , Gate-to-Source Voltage (V)
Q , Total Gate Char
g
e
(
nC
)
V = -80V
V = -50V
V = -20V
DS
DS
DS
FOR TEST CIRCUIT
SEE FIGURE 13
I = -21A
D
1
10
100
1000
0.4 0.8 1.2 1.6 2.0 2.4
T = 25°C
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
T = 175°C
J
1
10
100
1000
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10ms
A
-I , Drain Current (A)
-V , Drain-to-Source Volta
g
e
(
V
)
DS
D
10µs
100µs
1ms
T = 25°C
T = 175°C
Sin
g
le Pulse
C
J