Datasheet
IRF3415PbF
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage 1.3 V T
J
= 25°C, I
S
= 22A, V
GS
= 0V
t
rr
Reverse Recovery Time 260 390 ns T
J
= 25°C, I
F
= 22A
Q
rr
Reverse RecoveryCharge 2.2 3.3 µC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 150 V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient 0.17 V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance 0.042 Ω V
GS
= 10V, I
D
= 22A
V
GS(th)
Gate Threshold Voltage 2.0 4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 19 S V
DS
= 50V, I
D
= 22A
25
µA
V
DS
= 150V, V
GS
= 0V
250 V
DS
= 120V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage 100 V
GS
= 20V
Gate-to-Source Reverse Leakage -100
nA
V
GS
= -20V
Q
g
Total Gate Charge 200 I
D
= 22A
Q
gs
Gate-to-Source Charge 17 nC V
DS
= 120V
Q
gd
Gate-to-Drain ("Miller") Charge 98 V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time 12 V
DD
= 75V
t
r
Rise Time 55 I
D
= 22A
t
d(off)
Turn-Off Delay Time 71 R
G
= 2.5Ω
t
f
Fall Time 69 R
D
= 3.3Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance 2400 V
GS
= 0V
C
oss
Output Capacitance 640 pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance 340 = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ 22A, di/dt ≤ 820A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Notes:
V
DD
= 25V, starting T
J
= 25°C, L = 2.4mH
R
G
= 25Ω, I
AS
= 22A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
43
150
A