Datasheet

IRF3415PbF
HEXFET
®
Power MOSFET
PD - 94963
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
S
D
G
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 43
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 30 A
I
DM
Pulsed Drain Current  150
P
D
@T
C
= 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 590 mJ
I
AR
Avalanche Current 22 A
E
AR
Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case  0.75
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50  °C/W
R
θJA
Junction-to-Ambient  62
Thermal Resistance
V
DSS
= 150V
R
DS(on)
= 0.042Ω
I
D
= 43A
T
O
-22
0
AB
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
1/30/04
l Lead-Free