Datasheet

IRF2805PbF
HEXFET
®
Power MOSFET
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.45
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
Thermal Resistance
V
DSS
= 55V
R
DS(on)
= 4.7mΩ
I
D
= 75A
07/22/10
www.irf.com 1
TO-220AB
HEXFET(R) is a registered trademark of International Rectifier.
S
D
G
Description
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Typical Applications
l Industrial Motor Drive
This HEXFET
®
Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use
in a wide variety of applications.
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon limited) 175
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (See Fig.9) 120 A
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package limited) 75
I
DM
Pulsed Drain Current  700
P
D
@T
C
= 25°C Power Dissipation 330 W
Linear Derating Factor 2.2 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 450 mJ
E
AS
(6 sigma) Single Pulse Avalanche Energy Tested Value 1220
I
AR
Avalanche Current See Fig.12a, 12b, 15, 16 A
E
AR
Repetitive Avalanche Energy mJ
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting Torque, 6-32 or M3 screw 1.1 (10) N•m (lbf•in)
Absolute Maximum Ratings
Features
PD - 95493A