Datasheet

ManualsBrandsIR ManualsDiscrete SemiconductorsMOSFET N, 55 V 169 A 330 W TO-220AB

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 169

@ T

= 100°C Continuous Drain Current, V

@ 10V 118 A

Pulsed Drain Current  680

= 25°C Power Dissipation 330 W

Linear Derating Factor 2.2 W/°C

Gate-to-Source Voltage ± 20 V

Single Pulse Avalanche Energy 560 mJ

Avalanche Current See Fig.12a, 12b, 15, 16 A

Repetitive Avalanche Energy mJ

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)

HEXFET

Power MOSFET

Specifically designed for Automotive applications, this

Stripe Planar design of HEXFET

Power MOSFETs

utilizes the latest processing techniques to achieve

extremely low on-resistance per silicon area. Additional

features of this HEXFET power MOSFET are a 175°C

junction operating temperature, fast switching speed

and improved repetitive avalanche rating. These benefits

combine to make this design an extremely efficient and

reliable device for use in Automotive applications and a

wide variety of other applications.

Absolute Maximum Ratings

DSS

= 55V

DS(on)

= 5.3mΩ

= 169A

Description

02/02/04

www.irf.com 1

● Advanced Process Technology

● Ultra Low On-Resistance

● Dynamic dv/dt Rating

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

Benefits

AUTOMOTIVE MOSFET

Thermal Resistance

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 0.45 °C/W

θCS

Case-to-Sink, Flat, Greased Surface 0.50 –––

θJA

Junction-to-Ambient ––– 62

TO-220AB

IRF1405PbF

Typical Applications

● Electric Power Steering (EPS)

● Anti-lock Braking System (ABS)

● Wiper Control

● Climate Control

● Power Door

PD - 94969

● Lead-Free

Summary of content (9 pages)

PAGE 1
PD - 94969 IRF1405PbF AUTOMOTIVE MOSFET Typical Applications ● ● ● ● ● ● Electric Power Steering (EPS) Anti-lock Braking System (ABS) Wiper Control Climate Control Power Door Lead-Free Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 5.
PAGE 2
IRF1405PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 55 ––– ––– 2.
PAGE 3
IRF1405PbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 10 4.5V 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 20µs PULSE WIDTH TJ = 175 °C 10 0.1 100 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.
PAGE 4
IRF1405PbF 100000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 10000 Ciss Coss 1000 Crss 100 1 10 100 VGS , Gate-to-Source Voltage (V) C, Capacitance(pF) Coss = Cds + Cgd 20 ID = 101A VDS = 44V VDS = 27V 16 12 8 4 VDS, Drain-to-Source Voltage (V) 0 FOR TEST CIRCUIT SEE FIGURE 13 0 60 120 180 240 300 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs.
PAGE 5
IRF1405PbF 200 VDS LIMITED BY PACKAGE VGS I D , Drain Current (A) 160 D.U.T. RG 120 RD + -VDD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 80 Fig 10a. Switching Time Test Circuit 40 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM 0.
PAGE 6
IRF1405PbF D.U.T RG 20V + V - DD IAS 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp ID 41A 71A BOTTOM 101A TOP 1000 DRIVER L VDS EAS , Single Pulse Avalanche Energy (mJ) 1200 15V A 800 600 400 200 0 I AS 25 50 75 100 125 150 Starting TJ , Junction Temperature( °C) 175 Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD 4.0 VG Charge Fig 13a.
PAGE 7
IRF1405PbF 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 0.01 100 0.05 0.10 10 1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.
PAGE 8
IRF1405PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 9
IRF1405PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 3 4- DRAIN 14.09 (.555) 13.47 (.530) 4- COLLECTOR 4.06 (.160) 3.55 (.