Datasheet
Data Sheet No. PD60046-S
Typical Connection
Product Summary
V
OFFSET
600V max.
I
O
+/- 130 mA / 270 mA
V
OUT
10 - 20V
t
on/off
(typ.) 680 & 150 ns
Deadtime (typ.) 520 ns
HALF-BRIDGE DRIVER
Features
•
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
•
Gate drive supply range from 10 to 20V
•
Undervoltage lockout
•
3.3V, 5V and 15V input logic compatible
•
Cross-conduction prevention logic
•
Internally set deadtime
•
High side output in phase with input
•
Shut down input turns off both channels
•
Matched propagation delay for both channels
• Also available LEAD-FREE
Description
The IR2104(S) are high voltage, high speed power
MOSFET and IGBT drivers with dependent high and low
side referenced output channels. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized
monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic.
The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The
floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which
operates from 10 to 600 volts.
www.irf.com 1
IR2104
(
S
) & (PbF)
V
CC
V
B
V
S
HO
LOCOM
IN
SD
SD
IN
up to 600V
TO
LOAD
V
CC
(Refer to Lead Assignment for correct pin configuration) This/These diagram(s) show electrical
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
Packages
8 Lead PDIP
IR2104
8 Lead SOIC
IR2104S










