Datasheet

ManualsBrandsIR ManualsDriversHigh Side/Low Side Power MOSFET / IGBT Driver PDIP

Features

· Floating channel designed for bootstrap operation

Fully operational to 200V

Tolerant to negative transient voltage, dV/dt immune

· Gate drive supply range from 10 to 20V

· Undervoltage lockout for both channels

· 3.3V logic compatible

Separate logic supply range from 3.3V to 20V

Logic and power ground ±5V offset

· CMOS Schmitt-triggered inputs with pull-down

· Shut down input turns off both channels

· Matched propagation delay for both channels

· Outputs in phase with inputs

· Also available LEAD-FREE

Packages

HIGH AND LOW SIDE DRIVER

Product Summary

OFFSET

200V max.

+/- 3.0A / 3.0A typ.

OUT

10 - 20V

on/off

95 & 65 ns typ.

Delay Matching 15 ns max.

Description

The IR2010 is a high power, high voltage, high speed power MOSFET and IGBT

drivers with independent high and low side referenced output channels, ideal for

Audio Class D and DC-DC converter applications. Logic inputs are compatible with

standard CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high

pulse current buffer stage designed for minimum driver cross-conduction. Propaga-

tion delays are matched to simplify use in high frequency applications. The floating

channel can be used to drive an N-channel power MOSFET or IGBT in the high side

configuration which operates up to 200 volts. Proprietary HVIC and latch immune

CMOS technologies enable ruggedized monolithic construction.

IR2010

(S)(TR) & (PbF)

14-Lead PDIP

16-Lead SOIC

www.irf.com 1

Typical Connection

HIN

200V

LOA

COM

HIN

LIN

(Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections

only. Please refer to our Application Notes and DesignTips for proper circuit board layout.

Data Sheet No. PD60195-E

Applications

· Audio Class D amplifiers

· High power DC-DC SMPS converters

· Other high frequency applications

Summary of content (17 pages)

PAGE 1
Data Sheet No. PD60195-E IR2010(S)(TR) & (PbF) HIGH AND LOW SIDE DRIVER Features · · · · · · · · · Floating channel designed for bootstrap operation Fully operational to 200V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels 3.3V logic compatible Separate logic supply range from 3.
PAGE 2
IR2010(S)(TR) & (PbF) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition VB High side floating supply voltage VS Min. Max. -0.3 225 Units High side floating supply offset voltage VB - 25 VB + 0.
PAGE 3
IR2010(S)(TR) & (PbF) Dynamic Electrical Characteristics VBIAS (VCC , V BS, V DD ) = 15V, CL = 1000 pF, TA = 25°C and VSS = COM unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Figure 3. Symbol Definition Figure Min. Typ. Max.
PAGE 4
IR2010(S)(TR) & (PbF) Functional Block Diagram VB UV DETECT VDD VSS /COM LEVEL SHIFT HIN UV Q S LEVEL SHIFT CIRCUIT HO R VS SD VCC UV DETECT VSS /COM LEVEL SHIFT LIN LO DELAY COM VSS Lead Definitions Symbol Description VDD HIN SD LIN VSS VB HO VS VCC LO COM Logic supply Logic input for high side gate driver output (HO), in phase Logic input for shutdown Logic input for low side gate driver output (LO), in phase Logic ground High side floating supply High side gate drive output High side floa
PAGE 5
IR2010(S)(TR) & (PbF) HV =10 to 200V HIN LIN SD <50 V/ns HO LO Figure 1. Input/Output Timing Diagram Figure 2. Floating Supply Voltage Transient Test Circuit (0 to 200V) 50% 50% HIN LIN ton toff tr 90% HO LO Figure 3. Switching Time Test Circuit 90% 10% 10% Figure 4. Switching Time Waveform Definition HIN LIN 50% 50% 50% LO SD tsd HO LO tf HO 10% 90% MT MT 90% LO Figure 5. Shutdown Waveform Definitions www.irf.com HO Figure 6.
PAGE 6
IR2010(S)(TR) & (PbF) 250 Turn-on Time (nS) 200 150 200 Turn-on Time (nS) max 250 typ 100 max 150 100 typ 50 50 0 -50 0 -25 0 25 50 75 100 125 10 12 300 Turn-off Time (nS) 200 max 150 100 typ 50 0 0 20 2 4 6 8 10 12 14 16 18 200 max 150 100 typ 50 0 -50 20 -25 0 25 50 75 100 125 Temperature (C) VDD Supply Voltage (V) Figure 8A: Turn-off Time vs. Temperature Figure 8A. Turn-off Time vs. Temperature Figure 7C: Turn-on Time vs. Voltage Figure 7C.
PAGE 7
IR2010(S)(TR) & (PbF) 250 200 Shutdown Time (nS) Shutdown Time (nS) 250 max 150 100 typ 200 150 max 100 50 50 typ 0 0 -50 -25 0 25 50 75 100 10 125 12 14 18 20 Figure 9B. Shutdown Time vs. VCC/V BSVoltage Figure 9A. Shutdown Time vs.
PAGE 8
IR2010(S)(TR) & (PbF) 15 Logic ’1’ Input Threshold (V) Turn-off Fall Time (nS) 40 12 30 max 20 typ 10 0 9 min 6 3 0 10 12 14 16 18 20 -50 -25 0 Figure 11B. Turn-Off Fall Time vs. VBIAS (VCC=VBS=VDD) Voltage Logic ’0’ Input Threshold (V) Logic ’1’ Input Threshold (V)) 75 100 125 15 12 9 6 3 min 12 9 max 6 3 0 0 0 2 4 6 8 10 12 14 16 18 -50 20 -25 0 Figure 12B. Logic 1 Input Threshold vs. V DD Voltage 50 75 100 125 Figure 13A.
PAGE 9
5 1.0 4 0.8 Low Low Level LevelOutput Output(V) (V) High Level Output (V) IR2010(S)(TR) & (PbF) 3 2 max 0.6 0.4 0.2 1 max 0.0 0 10 12 14 16 18 -50 20 -25 0 VBIAS Supply Voltage (V) 1.0 75 100 125 300 OffsetSupply SupplyCurrent Current(uA) (uA) Offset Low Level Output (V) 50 Figure 15A. Low Level Output vs. Temperature Figure 14B. High Level Output vs. V BIAS Voltage 0.8 0.6 0.4 0.2 max 200 max 100 0 0.
PAGE 10
500 500 400 400 VCC Supply Current (uA) VBS Supply Current (uA) IR2010(S)(TR) & (PbF) 300 max 200 100 300 max 200 100 typ typ 0 0 10 12 14 16 18 -50 20 -25 0 25 Figure 17B. Vbs Supply Current vs. VBS Voltage 100 125 20 400 VDD Supply Current (uA) VCC Supply Current (uA) 75 Figure 18A. Vcc Supply Current vs.
PAGE 11
IR2010(S)(TR) & (PbF) 5.0 Logic ’0’ Input Current (uA) Logic 1 Input Current (uA) 100 80 60 40 max 20 4.0 3.0 2.0 max 1.0 typ 0.0 0 2 4 6 8 10 12 14 16 18 -50 20 -25 0 5.0 11.0 4.0 10.0 3.0 2.0 max 75 100 125 Max. 9.0 Typ. 8.0 Min. 7.0 1.0 6.0 0.0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 VDD Voltage (V) 25 50 75 100 125 Temperature (°C) Figure 21B. Logic 0 Input Current vs. VDD Voltage Figure 22. VBS Undervoltage (+) vs. Temperature 11.0 11.
PAGE 12
IR2010(S)(TR) & (PbF) 5.0 Output Source Current (uA) Vcc Undervoltage Lockout - (V) 11.0 10.0 Max. 9.0 8.0 Typ. 7.0 Min. 6.0 4.0 typ 3.0 min 2.0 1.0 0.0 -50 -25 0 25 50 75 100 -50 125 -25 0 Temperature (°C) Figure 25. VCC Undervoltage (-) vs. Temperature 50 75 100 125 Figure 26A. Output Source Current vs. Temperature 5.0 Output Sink Current (uA) 5.0 Output Source Current (uA) 25 Temperature (C) 4.0 3.0 typ 2.0 min 1.0 4.0 typ 3.0 min 2.0 1.0 0.0 0.
PAGE 13
IR2010(S)(TR) & (PbF) 150.00 125.00 200V 100.00 100V 10V 75.00 50.00 25.00 Junction Temperature (C) Junction Temperature (C) 150.00 125.00 200V 100.00 100V 75.00 10V 50.00 25.00 0.00 0.00 1.E+03 1.E+04 1.E+05 1.E+03 1.E+06 1.E+04 1.E+05 1.E+06 Frequency (Hz) Frequency (Hz) Figure 30: IR2010 Tj vs Frequency Figure 29: IR2010 Tj vs Frequency Figure 29. IR2010 Tj vs Frequency RGATE = 16 Ohm, Vcc = 15V with IRFBC40 Figure 30.
PAGE 14
IR2010(S)(TR) & (PbF) 150.00 200V 125.00 100V 100.00 10V 75.00 50.00 25.00 200V 125.00 Junction Temperature (C) Junction Temperature (C) 150.00 100V 100.00 10V 75.00 50.00 25.00 0.00 0.00 1.E+03 1.E+04 1.E+05 1.E+03 1.E+06 Frequency (Hz) 1.E+04 1.E+05 1.E+06 Frequency (Hz) Figure 34. IR2010S Tj vs Frequency RGATE = 22 Ohm, Vcc = 15V with IRFBC30 Figure 33. IR2010S Tj vs Frequency RGATE = 16 Ohm, Vcc = 15V with IRFBC40 150.00 Junction Temperature (C) 125.00 200V 100.00 100V 75.
PAGE 15
IR2010(S)(TR) & (PbF) Case Outlines 14 Lead PDIP 16 Lead SOIC (wide body) www.irf.
PAGE 16
IR2010(S)(TR) & (PbF) Tape and Reel Details: SOIC8N LOADED TAPE FEED DIRECTION A B H D F C NOTE : CONTROLLING DIMENSION IN MM E G CARRIER TAPE DIMENSION FOR 8SOICN Metric Code Min Max A 7.90 8.10 B 3.90 4.10 11.70 12.30 C D 5.45 5.55 E 6.30 6.50 F 5.10 5.30 G 1.50 n/a 1.50 1.60 H Imperial Min 0.311 0.153 0.46 0.214 0.248 0.200 0.059 0.059 Max 0.318 0.161 0.484 0.218 0.255 0.208 n/a 0.062 F D C B A E G H REEL DIMENSIONS FOR 8SOICN Metric Code Min Max 329.60 330.25 A B 20.95 21.45 C 12.80 13.
PAGE 17
IR2010(S)(TR) & (PbF) LEADFREE PART MARKING INFORMATION Part number Date code IRxxxxxx YWW? Pin 1 Identifier ? P MARKING CODE Lead Free Released Non-Lead Free Released IR logo ?XXXX Lot Code (Prod mode - 4 digit SPN code) Assembly site code Per SCOP 200-002 ORDER INFORMATION Basic Part (Non-Lead Free) 14-Lead PDIP IR2010 order IR2010 16-Lead SOIC IR2010S order IR2010S Leadfree Part 14-Lead PDIP IR2010 order IR2010PbF 16-Lead SOIC IR2010S order IR2010SPbF 16-Lead SOIC IR2010STR order IR2010STRPbF