Datasheet

AUIPS2051L/AUIPS2052G
www.irf.com
3
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to Ground lead. (Tambient=25°C unless otherwise specified).
Symbol
Parameter
Min.
Max.
Units
Vds
Maximum drain to source voltage
-0.3
60
V
Vds cont.
Maximum continuous drain to source voltage
-
35
V
Vin
Maximum input voltage
-0.3
6
V
Isd cont.
Max diode continuous current (limited by thermal dissipation) Rth=125°C/W

1
A
Pd
Maximum power dissipation (internally limited by thermal protection)
W
Rth=60C°/W AUIPS2051L 1” sqr. footprint

2
Rth=100°C/W AUIPS2052G std. footprint

1.25
ESD
Electrostatic discharge voltage (Human body) C=100pF, R=1500
kV
Between drain and source

4
Other combinations

3
Electrostatic discharge voltage (Machine Model) C=200pF,R=0
Between drain and source

0.5
Other combinations

0.3
Tj max.
Max. storage & operating temperature junction temperature
-40
150
°C
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Units
Rth1
Thermal resistance junction to ambient SOT-223 std. footprint
100

°C/W
Rth2
Thermal resistance junction to ambient SOT-223 1” sqr. footprint
60

Rth1
Thermal resistance junction to ambient SO-8 std. Footprint
100

1 die active
Rth1
Thermal resistance junction to ambient SO-8 std. footprint
130

2 die active
note : Tj=Power dissipated in one channel x Rth
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol
Parameter
Min.
Max.
Units
VIH
High level input voltage
4
5.5
VIL
Low level input voltage
0
0.5
Ids
Continuous drain current, Tambient=85°C, Tj=125°C, Vin=5V,Rth=100°C/W

0.9
A
Rin
Recommended resistor in series with IN pin to generate a diagnostic
0.5
5
k
Max. t rise
Max. input rising time

1
µs