Datasheet

12
Die Characteristics
DIE DIMENSIONS:
128 mils x 77 mils
METALLIZATION:
Type: Al
Thickness: 10k
Å ±1kÅ
SUBSTRATE POTENTIAL
GND
PASSIVATION:
Type: Nitride over Silox
Nitride Thickness: 8k
Å
Silox Thickness: 7kÅ
TRANSISTOR COUNT:
185
PROCESS:
CMOS Metal Gate
Metallization Mask Layout
HIN232E
PIN 1 C1+
PIN 2 V+
C1-
PIN 7
PIN 17 V
CC
PIN 3
C2+
PIN 4
C2-
PIN 5
V-
PIN 6
T2
IN
PIN 11
T1
IN
PIN 12
R1
OUT
PIN 13
R1
IN
PIN 14
T1
OUT
PIN 15
GND
PIN 16
T2
OUT
PIN 8R2
IN
PIN 9T3
OUT
PIN 10R2
OUT
HIN202E, HIN206E, HIN207E, HIN208E, HIN211E, HIN213E, HIN232E