Datasheet

3
Absolute Maximum Ratings Thermal Information
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44V
GND to V-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
V
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND -0.3V) to (V+) +0.3V
Digital Inputs, V
S
, V
D
(Note 1). . . . . (V-) -2V to (V+) + 2V or 30mA,
Whichever Occurs First
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . 30mA
Peak Current, S or D (Pulsed 1ms, 10% Duty Cycle Max) . . 100mA
Operating Conditions
Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V (Max)
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40
o
C to 85
o
C
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8V (Max)
Input High Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4V (Min)
Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . ≤20ns
Thermal Resistance (Typical, Note 2) θ
JA
(
o
C/W)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
Maximum Junction Temperature (Plastic Packages) . . . . . . . .150
o
C
Maximum Storage Temperature Range. . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300
o
C
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
2. θ
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications Test Conditions: V+ = +15V, V- = -15V, V
L
= 5V, V
IN
= 2.4V, 0.8V (Note 3),
Unless Otherwise Specified
PARAMETER TEST CONDITIONS
TEMP
(
o
C)
(NOTE 4)
MIN
(NOTE 5)
TYP
(NOTE 4)
MAX UNITS
DYNAMIC CHARACTERISTICS
Turn-ON Time, t
ON
R
L
= 300Ω, C
L
= 35pF, V
S
= ±10V (Figure 1) 25 - 110 175 ns
85 - - 220 ns
Turn-OFF Time, t
OFF
25 - 100 145 ns
85 - - 160 ns
Break-Before-Make Time Delay DG413 Only, R
L
= 300Ω, C
L
= 35pF (Figure 2) 25 - 25 - ns
Charge Injection, Q (Figure 3) C
L
= 10nF, V
G
= 0V, R
G
= 0Ω 25 - 5 - pC
OFF Isolation (Figure 5) R
L
= 50Ω, C
L
= 5pF, f = 1MHz 25 - 68 - dB
Crosstalk (Channel-to-Channel),
(Figure 4)
25 - -85 - dB
Source OFF Capacitance, C
S(OFF)
f = 1MHz (Figure 6) 25 - 9 - pF
Drain OFF Capacitance, C
D(OFF)
25 - 9 - pF
Channel ON Capacitance,
C
D(ON)
+ C
S(ON)
25 - 35 - pF
DIGITAL INPUT CHARACTERISTICS
Input Current V
IN
Low, I
IL
V
IN
Under Test = 0.8V, All Others = 2.4V Full -0.5 0.005 0.5 µA
Input Current V
IN
High, I
IH
V
IN
Under Test = 2.4V, All Others = 0.8V Full -0.5 0.005 0.5 µA
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, V
ANALOG
I
S
= 10mA Full -15 - 15 V
Drain-Source ON Resistance,
r
DS(ON)
I
S
= 10mA, V
D
= ±8.5V, V+ = 13.5V, V- = -13.5V 25 - 25 35 Ω
Full - - 45 Ω
±
±
DG411, DG412, DG413