Datasheet

ManualsBrandsIntersil ManualsAnalogue SwitchesAnalogue Switch IC DIL-16

File Number

3282.5

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

DG411, DG412, DG413

Monolithic Quad SPST, CMOS Analog

Switches

The DG411 series monolithic CMOS analog switches are

drop-in replacements for the popular DG211 and DG212

series devices. They include four independent single pole

throw (SPST) analog switches, and TTL and CMOS

compatible digital inputs.

These switches feature lower analog ON resistance (<35Ω)

and faster switch time (t

< 175ns) compared to the

DG211 or DG212. Charge injection has been reduced,

simplifying sample and hold applications.

The improvements in the DG411 series are made possible

by using a high voltage silicon-gate process. An epitaxial

layer prevents the latch-up associated with older CMOS

technologies. The 44V maximum voltage range permits

controlling 40V

P-P

signals. Power supplies may be

single-ended from +5V to +34V, or split from ±5V to ±20V.

The four switches are bilateral, equally matched for AC or

bidirectional signals. The ON resistance variation with

analog signals is quite low over a ±15V analog input range.

The switches in the DG411 and DG412 are identical,

differing only in the polarity of the selection logic. Two of the

switches in the DG413 (#1 and #4) use the logic of the

DG211 and DG411 (i.e., a logic “0” turns the switch ON) and

the other two switches use DG212 and DG412 positive logic.

This permits independent control of turn-on and turn-off

times for SPDT conﬁgurations, permitting “break-before-

make” or “make-before-break” operation with a minimum of

external logic.

Features

• ON Resistance (Max). . . . . . . . . . . . . . . . . . . . . . . . . 35Ω

• Low Power Consumption (P

) . . . . . . . . . . . . . . . . . . <35µW

• Fast Switching Action

-t

(Max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175ns

-t

OFF

(Max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145ns

• Low Charge Injection

• Upgrade from DG211/DG212

• TTL, CMOS Compatible

• Single or Split Supply Operation

Applications

• Audio Switching

• Battery Operated Systems

• Data Acquisition

• Hi-Rel Systems

• Sample and Hold Circuits

• Communication Systems

• Automatic Test Equipment

Pinout

DG411, DG412, DG413

(PDIP, SOIC)

TOP VIEW

TRUTH TABLE

LOGIC

DG411 DG412 DG413

SWITCH SWITCH

SWITCH

1, 4

SWITCH

2, 3

0 ON OFF OFF ON

1 OFF ON ON OFF

NOTE: Logic “0” ≤0.8V. Logic “1” ≥2.4V.

Ordering Information

PART

NUMBER

TEMP. RANGE

(

C) PACKAGE PKG. NO.

DG411DJ -40 to 85 16 Ld PDIP E16.3

DG411DY -40 to 85 16 Ld SOIC M16.15

DG412DJ -40 to 85 16 Ld PDIP E16.3

DG412DY -40 to 85 16 Ld SOIC M16.15

DG413DJ -40 to 85 16 Ld PDIP E16.3

DG413DY -40 to 85 16 Ld SOIC M16.15

V-

GND

V+

Data Sheet June 1999

Summary of content (11 pages)

PAGE 1
DG411, DG412, DG413 Data Sheet June 1999 Monolithic Quad SPST, CMOS Analog Switches The DG411 series monolithic CMOS analog switches are drop-in replacements for the popular DG211 and DG212 series devices. They include four independent single pole throw (SPST) analog switches, and TTL and CMOS compatible digital inputs. File Number Features • ON Resistance (Max) . . . . . . . . . . . . . . . . . . . . . . . . . 35Ω • Low Power Consumption (PD) . . . . . . . . . . . . . . . . . .
PAGE 2
DG411, DG412, DG413 Functional Diagrams Four SPST Switches per Package Switches Shown for Logic “1” Input DG411 DG412 S1 IN1 IN1 D1 S2 IN2 IN1 D2 S3 D2 S3 IN3 IN3 D3 S4 IN4 D1 S2 IN2 IN2 IN3 S1 D1 S2 D2 S3 D3 S4 D3 S4 IN4 IN4 D4 Schematic Diagram DG413 S1 D4 D4 (1 Channel) V+ S VVL V+ INX D GND V- Pin Descriptions PIN SYMBOL 1 IN1 Logic Control for Switch 1. DESCRIPTION 2 D1 Drain (Output) Terminal for Switch 1. 3 S1 Source (Input) Terminal for Switch 1.
PAGE 3
DG411, DG412, DG413 Absolute Maximum Ratings Thermal Information V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44V GND to V-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND -0.3V) to (V+) +0.3V Digital Inputs, VS , VD (Note 1). . . . . (V-) -2V to (V+) + 2V or 30mA, Whichever Occurs First Continuous Current (Any Terminal) . . . . . . . . . . . . . . .
PAGE 4
DG411, DG412, DG413 Electrical Specifications Test Conditions: V+ = +15V, V- = -15V, VL = 5V, VIN = 2.4V, 0.8V (Note 3), Unless Otherwise Specified (Continued) TEMP (oC) TEST CONDITIONS V+ = 16.5V, V- = -16.5V, VD = ±15.5V, VS = Source OFF Leakage Current, IS(OFF) Drain OFF Leakage Current, ID(OFF) ± PARAMETER 15.5V V+ = 16.5V, V- = -16.5V, VS = VD = ±15.5V Channel ON Leakage Current, ID(ON) + IS(ON) (NOTE 4) (NOTE 5) (NOTE 4) MIN TYP MAX UNITS 25 -0.25 ±0.1 0.
PAGE 5
DG411, DG412, DG413 Electrical Specifications (Single Supply) Test Conditions: V+ = +12V, V- = 0V, VL = 5V, VIN = 2.4V, 0.8V (Note 3), Unless Otherwise Specified (Continued) PARAMETER TEST CONDITIONS TEMP (oC) (NOTE 4) MIN (NOTE 5) TYP (NOTE 4) MAX UNITS 25 - 0.0001 1 µA - 5 µA -0.0001 - µA POWER SUPPLY CHARACTERISTICS Positive Supply Current, I+ V+ = 13.
PAGE 6
DG411, DG412, DG413 Test Circuits and Waveforms (Continued) SWITCH OUTPUT V+ RG D1 ∆VO VO INX VG OFF ON OFF OFF ON Q = ∆VO x CL OFF CL VVIN = 3V INX GND NOTE: INX dependent on switch configuration, input polarity determined by sense of switch. FIGURE 3A. TEST CIRCUIT FIGURE 3B. MEASUREMENT POINTS FIGURE 3. CHARGE INJECTION C SIGNAL GENERATOR V+ +15V C SIGNAL GENERATOR 0dBm VS VD 50Ω 0V, 2.4V IN1 IN2 0V, 2.4V VD ANALYZER RL V- GND 0V, 2.4V V- C -15V -15V FIGURE 4.
PAGE 7
DG411, DG412, DG413 Application Information Summing Amplifier When driving a high impedance, high capacitance load such as shown in Figure 7, where the inputs to the summing amplifier have some noise filtering, it is necessary to have shunt switches for rapid discharge of the filter capacitor, thus preventing offsets from occurring at the output. Single Supply Operation The DG411, DG412, DG413 can be operated with unipolar supplies from 5V to 44V.
PAGE 8
DG411, DG412, DG413 Typical Performance Curves 45 40 rDS(ON) (Ω) 35 A: B: C: D: E: F: 240 ±5V ±8V ±10V ±12V ±15V ±20V V+ = 15V, V- = -15V VL = 5V, VS = 10V 210 A 180 tON , tOFF (ns) 50 B 30 C 25 D E 20 F 15 150 tON 120 tOFF 90 60 10 30 5 TA = 25oC 0 -20 -15 -10 -5 0 5 10 15 0 -55 20 -35 -15 FIGURE 8. ON RESISTANCE vs VD AND POWER SUPPLY VOLTAGE 25 45 65 85 105 125 FIGURE 9.
PAGE 9
DG411, DG412, DG413 Die Characteristics DIE DIMENSIONS: PASSIVATION: 2760µm x 1780µm x 485µm Type: Nitride Thickness: 8kÅ ±1kÅ METALLIZATION: WORST CASE CURRENT DENSITY: Type: SiAl Thickness: 12kÅ ±1kÅ 1.
PAGE 10
DG411, DG412, DG413 Dual-In-Line Plastic Packages (PDIP) E16.3 (JEDEC MS-001-BB ISSUE D) N 16 LEAD DUAL-IN-LINE PLASTIC PACKAGE E1 INDEX AREA 1 2 3 INCHES N/2 -B- -AD E BASE PLANE -C- A2 SEATING PLANE A L D1 e B1 D1 A1 eC B 0.010 (0.25) M C A B S SYMBOL MIN MAX MIN MAX NOTES A - 0.210 - 5.33 4 A1 0.015 - 0.39 - 4 A2 0.115 0.195 2.93 4.95 - B 0.014 0.022 0.356 0.558 - C L B1 0.045 0.070 1.15 1.77 8, 10 eA C 0.008 0.014 C D 0.735 0.775 18.
PAGE 11
DG411, DG412, DG413 Small Outline Plastic Packages (SOIC) M16.15 (JEDEC MS-012-AC ISSUE C) N INDEX AREA H 0.25(0.010) M 16 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE B M E INCHES -B- 1 2 SYMBOL 3 L SEATING PLANE -A- h x 45o A D -C- α e B 0.25(0.010) M C 0.10(0.004) C A M B S NOTES: 1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Publication Number 95. 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. 3.