Datasheet

4
Absolute Maximum Ratings Thermal Information
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44.0V
GND to V-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25V
Digital Inputs, V
S
, V
D
(Note 3). . . . . .(V-) -2V to (V+) + 2V or 20mA,
Whichever Occurs First
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . 30mA
Peak Current, S or D (Pulsed 1ms, 10% Duty Cycle Max) . . 100mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to 85°C
Thermal Resistance (Typical, Note 4) θ
JA
(°C/W)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . -65°C to 125°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
3. Signals on S
X
, D
X
, EN or A
X
exceeding V+ or V- are clamped by internal diodes. Limit diode current to maximum current ratings.
4. θ
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications Test Conditions: V+ = +15V, V- = -15V, V
AL
= 0.8V, V
AH
= 2.4V, Unless Otherwise Specified
PARAMETER TEST CONDITIONS TEMP (°C)
(NOTE 5)
MIN
(NOTE 6)
TYP
(NOTE 5)
MAX UNITS
DYNAMIC CHARACTERISTICS
Transition Time, t
TRANS
(See Figure 1) Full - 160 250 ns
Break-Before-Make Interval, t
OPEN
(See Figure 3) 25 10 - - ns
Enable Turn-ON Time, t
ON(EN)
(See Figure 2) 25 - 115 150 ns
Full - - 225 ns
Enable Turn-OFF Time, t
OFF(EN)
(See Figure 2) Full - 105 150 ns
Charge Injection, Q C
L
= 10nF, V
S
= 0V 25 - 20 - pC
OFF Isolation V
EN
= 0V, R
L
= 1kΩ,
f = 100kHz (Note 9)
25 - -75 - dB
Logic Input Capacitance, C
IN
f = 1MHz 25 - 8 - pF
Source OFF Capacitance, C
S(OFF)
V
EN
= 0V, V
S
= 0V,
f = 1MHz
25 - 3 - pF
Drain OFF Capacitance, C
D(OFF)
V
EN
= 0V, V
D
= 0V,
f = 1MHz
DG408 25 - 26 - pF
DG409 25 - 14 - pF
Drain ON Capacitance, C
D(ON)
V
EN
= 3V, V
D
= 0V,
f = 1MHz, V
A
= 0V or 3V
DG408 25 - 37 - pF
DG409 25 - 25 - pF
DIGITAL INPUT CHARACTERISTICS
Logic Input Current,
Input Voltage High, I
AH
V
A
= 2.4V, 15V Full -10 - 10 µA
Logic Input Current,
Input Voltage Low, I
AL
V
EN
= 0V, 2.4V,
V
A
= 0V
Full -10 - 10 µA
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, V
ANALOG
Full -15 - 15 V
Drain-Source ON Resistance,
r
DS(ON)
V
D
= ±10V, I
S
= -10mA
(Note 7)
25 - 40 100 Ω
Full - - 125 Ω
r
DS(ON)
Matching Between Channels,
∆r
DS(ON)
V
D
= 10V, -10V (Note 8) 25 - - 15 Ω
Source OFF Leakage Current, I
S(OFF)
V
EN
= 0V, V
S
= ±10V,
V
D
= +10V
25 -0.5 - 0.5 nA
Full -5 - 5 nA
DG408, DG409