Datasheet

Electrical Specifications
38 Dual-Core Intel® Xeon® Processor 7100 Series Datasheet
Notes:
1. V
IL
is defined as the voltage level at a receiving agent that will be interpreted as a logical low value.
2. V
IH
is defined as the voltage level at a receiving agent that will be interpreted as a logical high value.
3. The V
TT
referred to in these specifications refers to the instantaneous V
TT
.
4. Leakage to V
SS
with pin held at V
TT
.
5. The maximum output current is based on maximum current handling capability of the buffer and is not
specified into the test load.
6. Leakage to V
TT
with pin held at 300 mV.
Notes:
1. All outputs are open drain.
2. TAP signal group must meet system signal quality specification in Chapter 3.
3. The V
TT
referred to in these specifications refers to instantaneous V
TT
.
4. The maximum output current is based on maximum current handling capability of the buffer and is not
specified into the test load.
5. V
HYS
represents the amount of hysteresis, nominally centered about 0.5 * V
TT
for all TAP inputs.
6. 0.24 V is defined at 20% of nominal V
TT
of 1.2 V.
Table 2-19. AGTL+ Signal Group DC Specifications
Symbol Parameter Min Max Unit Notes
V
IL Input Low Voltage 0.0 GTLREF - (0.10 * V
TT
)V1,3
V
IH Input High Voltage GTLREF + (0.10 * V
TT
)V
TT
V2,3
V
OH Output High Voltage 0.90 * V
TT
V
TT
V3
I
OL Output Low Current N/A V
TT
/
(0.50 * Rtt_min +
R
ON_min || R
L
)
mA 5
I
LI Input Leakage Current N/A ± 200 µA 4
I
LO Output Leakage Current N/A ± 200 µA 6
R
ON Buffer On Resistance 8 12 Ω
Table 2-20. PWRGOOD and TAP Signal Group DC Specifications
Symbol Parameter Min Max Unit Notes
1
V
HYS
Input Hysteresis 120 396 mV 5
V
T+
PWRGOOD Input Low to
High Threshold Voltage
0.5 (V
TT
+ V
HYS_MIN
+
0.24)
0.5 * (V
TT
+ V
HYS_MAX
+
0.24)
V3, 6
TAP Input Low to High
Threshold Voltage
0.5 * (V
TT
+ V
HYS_MIN
)0.5 * (V
TT
+ V
HYS_MAX
)V 3
V
T-
PWRGOOD Input High to
Low Threshold Voltage
0.4 * V
TT
0.6 * V
TT
V3
TAP Input High to Low
Threshold Voltage
0.5 * (V
TT
- V
HYS_MAX
)0.5 * (V
TT
- V
HYS_MIN
)V 3
V
OH
Output High Voltage N/A V
TT
V2,3
I
OL
Output Low Current 45 mA 4
I
LI
Input Leakage Current ±200 µA
I
LO
Output Leakage Current ±200 µA
R
ON
Buffer On Resistance 8 12 Ω
R
ON
TDO Buffer On
Resistance
712Ω