Datasheet

Datasheet 29
Electrical Specifications
.
Table 11. GTL+ Asynchronous Signal Group DC Specifications
Symbol Parameter Min Max Unit Notes
1
NOTES:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
V
IL
Input Low Voltage 0.0 V
TT
/2 – (0.10 * V
TT
)V
2, 3
2. V
IL
is defined as the voltage range at a receiving agent that will be interpreted as a logical low value.
3. LINT0/INTR and LINT1/NMI use GTLREF as a reference voltage. For these two signals V
IH
= GTLREF + (0.10 * V
TT
) and
V
IL
= GTLREF – (0.10 * V
TT
).
V
IH
Input High Voltage V
TT
/2 + (0.10 * V
TT
)V
TT
V
4, 5, 6, 3
4. V
IH
is defined as the voltage range at a receiving agent that will be interpreted as a logical high value.
5. V
IH
and V
OH
may experience excursions above V
TT
. However, input signal drivers must comply with the signal quality
specifications.
6. The V
TT
referred to in these specifications refers to instantaneous V
TT
.
V
OH
Output High Voltage 0.90*V
TT
V
TT
V
7, 5, 6
7. All outputs are open drain.
I
OL
Output Low Current —
V
TT
/
[(0.50*R
TT_MIN
)+(R
ON_MIN
)]
A
8
8. The maximum output current is based on maximum current handling capability of the buffer and is not specified into
the test load.
I
LI
Input Leakage Current N/A ± 200 µA
9
9. Leakage to V
SS
with land held at V
TT
.
I
LO
Output Leakage
Current
N/A ± 200 µA
10
10.Leakage to V
TT
with land held at 300 mV.
R
ON
Buffer On Resistance 6 12 W
Table 12. TAP Signal Group DC Specifications
Symbol Parameter Min Max Unit Notes
1, 2
NOTES:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2. All outputs are open drain.
V
HYS
Input Hysteresis 120 396 mV
3, 4
3. Leakage to V
TT
with land held at 300 mV.
4.
V
HYS
represents the amount of hysteresis, nominally centered about 0.5 * V
TT
, for all TAP inputs.
V
T+
PWRGOOD Input low-
to-high threshold
voltage
0.5 * (V
TT +
V
HYS_MIN
+ 0.24)
0.5 * (V
TT +
V
HYS_MAX
+ 0.24)
V
5, 6
5. The V
TT
referred to in these specifications refers to instantaneous V
TT
.
6. 0.24 V is defined at 20% of nominal V
TT
of 1.2 V.
TAP Input low-to-high
threshold voltage
0.5 * (V
TT +
V
HYS_MIN
)0.5 * (V
TT +
V
HYS_MAX
)V
5
V
T-
PWRGOOD Input high-
to-low threshold voltage
0.4 * V
TT
0.6 * V
TT
V
5
TAP Input high-to-low
threshold voltage
0.5 * (V
TT
– V
HYS_MAX
)0.5 * (V
TT
– V
HYS_MIN
)V
5
V
OH
Output High Voltage N/A V
TT
V
5
I
OL
Output Low Current — 22.2 mA
7
7. The maximum output current is based on maximum current handling capability of the buffer and is not specified into
the test load.
I
LI
Input Leakage Current — ± 200 µA
8
8. Leakage to Vss with land held at V
TT
.
I
LO
Output Leakage Current — ± 200 µA
3
R
ON
Buffer On Resistance 6 12 W