Datasheet

Electrical Specifications
30 Datasheet
NOTES:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2. The V
TT
referred to in these specifications refers to instantaneous V
TT
.
3. Measured at 0.1*V
TT
.
4. Measured at 0.9*V
TT
.
5. For Vin between 0 V and V
TT
. Measured when the driver is tristated.
NOTES:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2. Measured at 0.2*V
TT
.
3. V
OH
is determined by value of the external pullup resistor to V
TT
.
4. For V
IN
between 0 V and V
OH
.
2.13.1 V
CC
Overshoot Specification
The processor can tolerate short transient overshoot events where V
CC
exceeds the VID
voltage when transitioning from a high-to-low current load condition. This overshoot
cannot exceed VID + V
OS_MAX
(V
OS_MAX
is the maximum allowable overshoot above
VID). These specifications apply to the processor die voltage as measured across the
VCC_DIE_SENSE and VSS_DIE_SENSE lands and across the VCC_DIE_SENSE2 and
VSS_DIE_SENSE2 lands.
Table 2-15. CMOS Signal Input/Output Group and TAP Signal Group
DC Specifications
Symbol Parameter Min Typ Max Units Notes
1
V
IL
Input Low Voltage -0.10 0.00 0.3 * V
TT
V2,6
V
IH
Input High Voltage 0.7 * V
TT
V
TT
V
TT
+ 0.1 V 2
V
OL
Output Low Voltage -0.10 0 0.1 * V
TT
V2
V
OH
Output High Voltage 0.9 * V
TT
V
TT
V
TT
+ 0.1 V 2
I
OL
Output Low Current 1.70 N/A 4.70 mA 3
I
OH
Output High Current 1.70 N/A 4.70 mA 4
I
LI
Input Leakage Current N/A N/A ± 100 μA5
Table 2-16. Open Drain Output Signal Group DC Specifications
Symbol Parameter Min Typ Max Units Notes
1
V
OL
Output Low Voltage 0 N/A 0.20 * V
TT
V
V
OH
Output High Voltage 0.95 * V
TT
V
TT
1.05 * V
TT
V3
I
OL
Output Low Current 16 N/A 50 mA 2
I
LO
Leakage Current N/A N/A ± 200 μA4
Table 2-17. V
CC
Overshoot Specifications
Symbol Parameter Min Max Units Figure Notes
V
OS_MAX
Magnitude of V
CC
overshoot above
VID
—50mV2-4
T
OS_MAX
Time duration of V
CC
overshoot above
VID
—25µs2-4