Datasheet

Intel
®
Xeon
®
Processor E5-1600/E5-2600/E5-4600 v2 Product Families 149
Datasheet Volume One of Two
Electrical Specifications
Notes:
1. V
OS_MAX
is the measured overshoot voltage.
2. T
OS_MAX
is the measured time duration above VccMAX(I1).
3. Istep: Load Release Current Step, for example, I2 to I1, where I2 > I1.
4. VccMAX(I1) = VID - I1*RLL + 15mV
7.8.3 Signal DC Specifications
DC specifications are defined at the processor pads, unless otherwise noted.
DC specifications are only valid while meeting specifications for case temperature
(T
CASE
specified inChapter 5), clock frequency, and input voltages. Care should be
taken to read all notes associated with each specification.
Table 7-14. V
CC
Overshoot Specifications
Symbol Parameter Min Max Units Figure Notes
V
OS_MAX
Magnitude of V
CC
overshoot above VID 65 mV 7-5
T
OS_MAX
Time duration of V
CC
overshoot above VccMAX
value at the new lighter load
25 μs 7-5
Figure 7-5. V
CC
Overshoot Example Waveform
0 5 10 15 20 25 30
Voltage [V]
Time [us]
VccMAX (I1)
VID + V
OS_MAX
T
OS_MAX
V
OS_MAX
Table 7-15. DDR3 and DDR3L Signal DC Specifications (Sheet 1 of 2)
Symbol Parameter Min Typ Max Units Notes
1
I
IL
Input Leakage Current -1.4 +1.4 mA 10
Data Signals
V
IL
Input Low Voltage 0.43*V
CCD
V2, 3
V
IH
Input High Voltage 0.57*V
CCD
V2, 4, 5
R
ON
DDR3 Data Buffer On
Resistance
21 31 Ω 6
Data ODT On-Die Termination for Data
Signals
45
90
55
110
Ω 8
PAR_ERR_N ODT On-Die Termination for Parity
Error Signals
59 72 Ω