User Manual

Electrical Specifications
62 Datasheet
5.6.2.7 Processor Asynchronous Sideband DC Specifications
5.6.2.8 Miscellaneous Signals DC Specifications
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Table 5-20. Processor Asynchronous Sideband DC Specifications
Symbol Parameter Min Max Units Notes
CMOS1.05v Signals
V
IL_CMOS1.05V
Input Low Voltage – 0.4*V
CCIO_IN
V 1, 2
V
IH_CMOS1.05V
Input High Voltage 0.6*V
CCIO_IN
– V 1, 2
I
IL_CMOS1.05V
Input Leakage Current 50 200 µA 1,2
Open Drain CMOS (ODCMOS) Signals
V
IL_ODCMOS
Input Low Voltage Signals:
CATERR_N, MSMI_N,
PM_FAST_WAKE_N
–0.4*V
CCIO_IN
V 1, 2
V
IL_ODCMOS
Input Low Voltage
Signals:
MEM_HOT_C01/23_N, PROCHOT_N
–0.3*V
CCIO_IN
V 1, 2
V
IH_ODCMOS
Input High Voltage 0.7*V
CCIO_IN
– V 1, 2
V
OL_ODCMOS
Output Low Voltage – 0.2*V
CCIO_IN
V 1, 2
V
Hysteresis
Hysteresis
Signals:
MEM_HOT_C01/23_N, PROCHOT_N
0.1*V
CCIO_IN
–
V
Hysteresis
Hysteresis
Signal: CATERR_N, MSMI_N,
PM_FAST_WAKE_N
0.05*V
CCIO_IN
–
I
L
Input Leakage Current 50 200 µA
R
ON
Buffer On Resistance 4 14  1, 2
Output Edge Rate
Signal: MEM_HOT_C{01/23}_ N,
ERROR_N[2:0],
THERMTRIP, PROCHOT_N
0.05 0.60 V/ns 3
Output Edge Rate
Signal: CATERR_N, MSMI_N,
PM_FAST_WAKE_N
0.2 1.5 V/ns 3
Notes:
1. This table applies to the processor sideband and miscellaneous signals specified in Table 5-5, “Signal
Groups” on page 47.
2. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
3. These are measured between V
IL
and V
IH
.
Table 5-21. Miscellaneous Signals DC Specifications
Symbol Parameter Min Nominal Max Units Notes
SKTOCC_N Signal
V
O_ABS_MAX
Output Absolute Max Voltage – 3.30 3.50 V
I
OMAX
Output Max Current – – 1 mA