Datasheet

Processor Asynchronous Sideband DC Specifications
Symbol Parameter Min Max Units Notes
CMOS1.05v Signals
V
IL_CMOS1.05V
Input Low Voltage 0.4*V
CCIO_IN
V 1, 2
V
IH_CMOS1.05V
Input High Voltage 0.6*V
CCIO_IN
V 1, 2
I
IL_CMOS1.05V
Input Leakage Current 50 200 µA 1,2
Open Drain CMOS (ODCMOS) Signals
V
IL_ODCMOS
Input Low Voltage
Signals:
CATERR_N, MSMI_N, PM_FAST_WAKE_N
0.4*V
CCIO_IN
V 1, 2
V
IL_ODCMOS
Input Low Voltage
Signals:
MEM_HOT_C01/23_N, PROCHOT_N
0.3*V
CCIO_IN
V 1, 2
V
IH_ODCMOS
Input High Voltage 0.7*V
CCIO_IN
V 1, 2
V
OL_ODCMOS
Output Low Voltage 0.2*V
CCIO_IN
V 1, 2
V
Hysteresis
Hysteresis
Signals:
MEM_HOT_C01/23_N, PROCHOT_N
0.1*V
CCIO_IN
V
Hysteresis
Hysteresis
Signal: CATERR_N, MSMI_N, PM_FAST_WAKE_N
0.05*V
CCIO_IN
I
L
Input Leakage Current 50 200 µA
R
ON
Buffer On Resistance 4 14 Ω 1, 2
Output Edge Rate
Signal: MEM_HOT_C{01/23}_ N, ERROR_N[2:0],
THERMTRIP, PROCHOT_N
0.05 0.60 V/ns 3
Output Edge Rate
Signal: CATERR_N, MSMI_N, PM_FAST_WAKE_N
0.2 1.5 V/ns 3
Note:
1. This table applies to the processor sideband and miscellaneous signals specified in Table 7 on page 23.
2. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
3. These are measured between V
IL
and V
IH
.
Miscellaneous Signals DC Specifications
Symbol
Parameter Min Nominal Max Units
SKTOCC_N Signal
V
O_ABS_MAX
Output Absolute Max Voltage 3.30 3.50 V
I
OMAX
Output Max Current 1 mA
Package C-State Power Specifications
The following table lists the processor package C-state power specifications for the
various processor SKUs.
2.9.3.7
2.9.3.8
2.10
Intel
®
Xeon
®
Processor E5-1600 and E5-2600 v3 Product Families—Electrical Specifications
Intel
®
Xeon
®
Processor E5-1600 and E5-2600 v3 Product Families, Volume 1 of 2, Electrical
Datasheet September 2014
42 Order No.: 330783-001