Datasheet

Electrical Specifications
Datasheet 31
Table 10. Legacy CMOS Signal Group DC Specifications
Symbol Parameter Min Typ Max Unit Notes
1
V
CCP
I/O Voltage 1.00 1.05 1.10 V
V
IH
Input High Voltage 0.7*V
CCP
V
CCP
VCCP+0.1 V 2
V
IL
Input Low Voltage
CMOS
-0.10 0.00 0.3*V
CCP
V 2, 3
V
OH
Output High Voltage 0.9*V
CCP
V
CCP
V
CCP
+0.1 V 2
V
OL
Output Low Voltage -0.10 0 0.1*V
CCP
V 2
I
OH
Output High Current 1.5 — 4.1 mA 5
I
OL
Output Low Current 1.5 — 4.1 mA 4
I
LI
Input Leakage
Current
— — ± 100 µA 6
Cpad1 Pad Capacitance 1.6 2.1 2.55 pF 7
Cpad2
Pad Capacitance for
CMOS Input
0.95 1.2 1.45 8
NOTES:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2. The V
CCP
referred to in these specifications refers to instantaneous V
CCP
.
3. Reserved.
4. Measured at 0.1*V
CCP
.
5. Measured at 0.9*V
CCP
.
6. For Vin between 0V and V
CCP
. Measured when the driver is tri-stated.
7. Cpad1 includes die capacitance only for DPRSTP#, DPSLP#, PWRGOOD. No package
parasitics are included.
8. Cpad2 includes die capacitance for all other CMOS input signals. No package parasitics
are included.