Datasheet

Electrical Specifications
44 Datasheet
Table 12. Legacy CMOS Signal Group DC Specifications
Symbol Parameter Min. Typ. Max. Unit Notes
1
V
CCP
I/O Voltage 1.00 1.05 1.10 V 8
V
CCP
C6 I/O Voltage for C6 1.00 1.05 1.10 V 8
V
IH
Input High Voltage 0.7*V
CCP
V
CCP
VCCP+0.1 V 2
V
IL
Input Low Voltage CMOS -0.10 0.00 0.3*V
CCP
V 2
V
OH
Output High Voltage 0.9*V
CCP
V
CCP
V
CCP
+0.1 V 2
V
OL
Output Low Voltage -0.10 0 0.1*V
CCP
V 2
I
OH
Output High Current 1.5 — 4.1 mA 4
I
OL
Output Low Current 1.5 — 4.1 mA 3
I
LI
Input Leakage Current — — ± 100 µA 5
Cpad1 Pad Capacitance 1.6 2.1 2.55 pF 6
Cpad2
Pad Capacitance for CMOS
Input
0.95 1.2 1.45 7
NOTES:
1. Unless otherwise noted, all specifications in this table apply to all processor
frequencies.
2. The V
CCP
referred to in these specifications refers to instantaneous V
CCP
.
3. Measured at 0.1*V
CCP
.
4. Measured at 0.9*V
CCP
.
5. For Vin between 0V and V
CCP
. Measured when the driver is tri-stated.
6. Cpad1 includes die capacitance only for DPRSTP#, DPSLP#, PWRGOOD. No package
parasitics are included.
7. Cpad2 includes die capacitance for all other CMOS input signals. No package parasitics
are included.
8. V
CCP
C6 = V
CCP
during normal operation and a specific tolerance may be added for this
later.
Table 13. Open Drain Signal Group DC Specifications
Symbol Parameter Min. Typ. Max. Unit Notes
1
V
OH
Output High Voltage V
CCP-–
5% V
CCP
V
CCP
+5% V 3
V
OL
Output Low Voltage 0 — 0.20 V
I
OL
Output Low Current 16 — 50 mA 2
I
LO
Output Leakage Current — — ±200 µA 4
Cpad Pad Capacitance 1.9 2.2 2.45 pF 5
NOTES:
1. Unless otherwise noted, all specifications in this table apply to all processor
frequencies.
2. Measured at 0.2 V.
3. V
OH
is determined by value of the external pull-up resistor to V
CCP
.
4. For Vin between 0 V and V
OH
.
5. Cpad includes die capacitance only. No package parasitics are included.