Datasheet
Electrical Specifications
30 Dual-Core Intel
®
Xeon
®
Processor 7000 Series Datasheet
NOTES:
1. V
IL
is defined as the voltage range at a receiving agent that will be interpreted as a logical low value.
2. V
IH
is defined as the voltage range at a receiving agent that will be interpreted as a logical high value.
3. The V
TT
represented in these specifications refers to instantaneous V
TT
.
4. Leakage to V
SS
with pin held at V
TT
.
5. The maximum output current is based on maximum current handling capability of the buffer and is not
specified into the test load
6. Leakage to V
TT
with pin held at 300 mV
Table 2-12. BSEL[1:0], VID[5:0], and DC Specifications
Symbol Parameter Max Unit Notes
R
ON
Buffer On Resistance 60 Ω
1
NOTES:
1. These parameters are not tested and are based on design simulations.
I
OL
Max Pin Current 8 mA
I
LO
Output Leakage Current 200 µA
2
2. Leakage to V
SS
with pin held at 2.5 V.
V
TOL
Voltage Tolerance 3.3 + 5% V
3
3. Represents the maximum allowable termination voltage.
Table 2-13. VIDPWRGD DC Specifications
Symbol Parameter Min Max Unit Figure Notes
V
IL
Input Low Voltage 0.0 0.30 V
V
IH
Input High Voltage 0.90 V
TT
V
Table 2-14. AGTL+ Signal Group DC Specifications
Symbol Parameter Min Max Unit Notes
VIL Input Low Voltage 0.0 GTLREF – (0.10 *
V
TT
)
V
1,3
VIH Input High Voltage GTLREF
+(0.10 * V
TT
)
V
TT
V
2, 3
VOH Output High Voltage 0.90 * V
TT
V
TT
V
3
IOL Output Low Current N/A V
TT
/
(0.50 * Rtt_min +
R
ON_min || R
L
)
mA
5
ILI Input Leakage Current N/A ±200 µA
4,6
ILO Output Leakage Current N/A ±200 µA
4,6
RON Buffer On Resistance 4 8 Ω
Table 2-15. PWRGOOD Input and TAP Signal Group DC Specifications (Sheet 1 of 2)
Symbol Parameter Min Max Unit Notes
V
HYS
Input Hysteresis 200 350 mV 5
V
t+
Input Low to High
Threshold Voltage
0.5 * (V
TT
+ V
HYS_MIN
) 0.5 * (V
TT
+ V
HYS_MAX
)V 3
V
t-
Input High to Low
Threshold Voltage
0.5 * (V
TT
– V
HYS_MAX
) 0.5 * (V
TT
– V
HYS_MIN
)V 3
V
OH
Output High Voltage N/A V
TT
V 1,2,4
I
OL
Output Low Current 45 mA 4
I
IL
Input Leakage Current N/A ±200 µA