Guide

LGA2011-1 Socket Electrical
82 Intel® Xeon® Processor E7 2800/4800/8800 v2 Product Family
Thermal/ Mechanical Specifications and Design Guide
E.2 S-Parameters
S-parameter data is to be collected for both single-ended and differential structures
using a 4-port PNA. Test structures must be designed to isolate the contact/contacts
under test (that is, contact(s) must be surrounded by grounds). Data is to be collected
and reported up to 10 GHz. Appropriate de-embedding should be used to isolate the
contact(s) under test but the test package via will be included as part of the structure.
For single-ended structures, the insertion and return loss and the near-end and far-end
crosstalk shall be measured. For differential structures, the differential insertion and
return loss and the near-end and far-end crosstalk shall be measured. For crosstalk
measurements, the two contacts (or contact pairs for differential) shall be located
adjacent to one another at the minimum pitch and the entire structure shall be
surrounded by grounds.
Material Characterization:
Dielectric Constant & Loss
Tangent
Read & record
Report the dielectric constant and loss tangent over a
frequency range from 3 GHz to 10 GHz. Include in
reporting any differences due to material anisotropy.
Measurements are at room temperature.
Dielectric Withstand Voltage 360 Volts RMS
Insulation Resistance 800 Mega-Ohms
Table E-2. Max Chain Average Resistance
Contacts per Chain
Max Chain LLCR
Limit (milli-Ohms)
2 59.5
4 40.75
6 34.5
8 31.4
10 29.5
12 28.25
14 27.4
Table E-3. S-parameters Requirements
Metric Value Frequency
Single-Ended
S11 <-12 dB
0-3 GHz
S12 <0.6 dB
Near-End Xtalk <-18 dB
Far-End Xtalk <-20 dB
Differential
DS11 <-12 dB
0-3.5 GHz
DS12 <-75 dB
Near-End Xtalk <-30 dB
Far-End Xtalk <-35 dB
Table E-1. LGA2011-1 Electrical Requirements (Sheet 2 of 2)
Parameter Value Notes