Mobile Intel Pentium 4 Processor Supporting Hyper-Threading Technology on 90-nm Process Technology

Mobile Intel® Pentium® 4 Processor Supporting Hyper-Threading Technology on 90-nm Process Technology Datasheet 25
Electrical Specifications
NOTES:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2. These parameters are not tested and are based on design simulations.
3. Leakage to Vss with pin held at 2.5 V.
NOTE: These parameters are not tested and are based on design simulations.
2.11 V
CC
Overshoot Specification
The processor can tolerate short transient overshoot events where V
CC
exceeds the VID voltage
when transitioning from a high to low current load condition. This overshoot cannot exceed VID +
V
OS_MAX
(V
OS_MAX
is the maximum allowable overshoot voltage). The time duration of the
overshoot event must not exceed T
OS_MAX
(T
OS_MAX
is the maximum allowable time duration above
VID). These specifications apply to the processor die voltage as measured across the VCC_SENSE
and VSS_SENSE pins.
Table 2-15. BSEL [1:0] and VID[5:0] DC Specifications
Symbol Parameter Max Unit Notes
1
R
ON
(BSEL) Buffer On Resistance 60 Ω 2
R
ON
(VID)
Buffer On Resistance 60 Ω 2
I
OL
Max Pin Current 8 mA
I
LO
Output Leakage Current 200 µA 3
V
TOL
Voltage Tolerance 3.3 + 5% V
Table 2-16. BOOTSELECT DC Specifications
Symbol Parameter Min Typ Max Unit Notes
V
IL
Input Low Voltage 0.2 * VCCVID V 1
V
IH
Input High Voltage 0.8 * VCCVID 60 V 1
Table 2-17. V
CC
Overshoot Specifications
Symbol Parameter Min Typ Max Unit Figure Notes
V
OS_MAX
Magnitude of V
CC
overshoot above VID
0.050 V 2-3
T
OS_MAX
Time duration of V
CC
overshoot above VID
25 µs 2-3