Mobile Intel Pentium 4 Processor Supporting Hyper-Threading Technology on 90-nm Process Technology

24 Mobile Intel® Pentium® 4 Processor Supporting Hyper-Threading Technology on 90-nm Process Technology Datasheet
Electrical Specifications
.
NOTES:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2. All outputs are open drain.
3. Refer to the processor I/O Buffer Models for I/V characteristics.
4. The V
CC
referred to in these specifications refers to instantaneous V
CC
.
5. The maximum output current is based on maximum current handling capability of the buffer and is not
specified into the test load.
6. V
HYS
represents the amount of hysteresis, nominally centered about 0.5 * V
CC
for all TAP inputs.
7. Leakage to Vss with pin held at V
CC
.
8. Leakage to V
CC
with Pin held at 300 mV.
Table 2-12. PWRGOOD and TAP Signal Group DC Specifications
Symbol Parameter Min Max Unit Notes
1, 2
VHYS Input Hysteresis 200 350 mV 7
V
T+
Input low to high
threshold voltage
0.5 * (V
CC
+ VHYS_MIN) 0.5 * (V
CC
+ VHYS_MAX)V 5
V
T-
Input high to low
threshold voltage
0.5 * (V
CC
- VHYS_MAX) 0.5 * (V
CC
- VHYS_MIN)V 5
V
OH Output High Voltage N/A V
CC
V3, 5
IOL Output Low Current 45 mA 6
I
LI
Input Leakage Current ± 200 µA
I
LO
Output Leakage Current ± 200 µA
RON Buffer On Resistance 7 12 Ω 4
Table 2-13. VCCVID DC Specifications
Symbol Parameter Min Typ Max Unit Notes
VCCVID Voltage 1.14 1.2 1.26 V
VCCVIDLB Voltage 1.14 1.2 1.26 V
Table 2-14. VIDPWRGD DC Specifications
Symbol Parameter Min Typ Max Unit Notes
V
IL Input Low Voltage 0.3 V
V
IH Input High Voltage 0.9