Datasheet

Electrical Characteristics
R
212 Datasheet
Symbol Parameter Min Typ Max Unit Notes
I
VCCSM
2.5 V DDR SDRAM System Memory
Data Buffer Supply Current (DDR333
SDRAM)
2.00 A
Intel
®
852GM/852GME/852GMV GMCH and Intel
®
852PM MCH Common
I
VCCDLVDS
1.5 V LVDS (Digital) Supply Current 0.04 A
I
VCCALVDS
1.5 V LVDS (Analog) Supply Current 0.07 A
I
VCCTXLVDS
2.5 V LVDS (I/O) Supply Current 0.05 A
IVCCDAC 1.5 V DAC Supply Current 0.07 A
I
VCC1_5_DVO
1.5 V DVO Supply Current 0.09 A
I
VCCGPIO
3.3 V GPIO Supply Current 0.02 A
I
VCCSM
2.5 V DDR SDRAM System Memory
Data Buffer Supply Current (DDR266
SDRAM)
1.70 A
I
SUS_VCCSM
2.5 V DDR SDRAM System Memory
Interface Standby Supply Current
1 mA
I
SMVREF_0
1.25V DDR SDRAM System Memory
Interface Reference Voltage Supply
Current
0.05 mA
I
SUS_SMVREF_0
DDR SDRAM System Memory
Interface Reference Voltage (1.25V)
Standby Supply Current
0.05 mA
I
TTRC/RCOMP
DDR SDRAM System Memory
Interface Resister Compensation
Voltage (1.25 V) Supply Current
40 mA
I
SUS_TTRC
DDR SDRAM System Memory
Interface Resister Compensation
Voltage (1.25 V) Standby Supply
Current
0 mA
NOTES:
1. This spec is the Thermal Design Power and is the estimated maximum possible expected power
generated in a component by a realistic application. It is based on extrapolations in both hardware and
software technology over the life of the component. It does not represent the expected power generated
by a power virus. Studies by Intel indicate that no application will cause thermally significant power
dissipation exceeding this specification, although it is possible to concoct higher power synthetic
workloads that write but never read. Under realistic read/write conditions, this higher power workload can
only be transient and is accounted in the Icc (max) spec.
2. I
GTL
for Host Interface for design with mobile Intel Celeron processor.