Datasheet

Electrical Characteristics
R
120 Intel
®
82845 MCH for DDR Datasheet
6.2 Power Characteristics
Table 19. Power Characteristics
Symbol Parameter Min Type Max Unit Notes
I
VTT
Intel
®
845 Chipset MCH VTT supply
Current
2.4 A
I
VCC1_5_CORE
1.5 V Core Supply Current 1.9 A 1
I
VCC1_5_AGP
1.5 V AGP Supply Current 0.37 A 1
I
VCC1_8
1.8 V Hub Interface Supply Current 0.20 A
HVREF, AGPREF, HI_REF Supply
Currents
10 mA
I
VCCSM
DDR System Memory Interface
(2.5 V) Supply Current
1.9 A
I
SUS_VCCSM
DDR System Memory Interface
(2.5 V) Standby Supply Current
25 mA
I
SDREF
DDR System Memory Interface
Reference Voltage (1.25 V) Supply
Current
10 mA
I
SUS_SDREF
DDR System Memory Interface
Reference Voltage (1.25 V) Standby
Supply Current
1 mA
I
TTRC
DDR System Memory Interface
Resister Compensation Voltage
(1.25 V) Supply Current
40 mA
I
SUS_TTRC
DDR System Memory Interface
Resister Compensation Voltage
(1.25 V) Standby Supply Current
0 mA
NOTES:
1. These current levels can happen simultaneously, and can be summed into one supply.
6.3 Signal Groups
The signal description includes the type of buffer used for the particular signal:
AGTL+ Open Drain AGTL+ interface signal. Refer to the AGTL+ I/O Specification for
complete details. The MCH integrates most AGTL+ termination resistors.
AGP AGP interface signals. These signals are compatible with AGP 2.0 1.5 V
Signaling Environment DC and AC Specifications. The buffers are not 3.3 V
tolerant.
HI CMOS Hub Interface 1.8 V CMOS buffers.
DDR CMOS DDR system memory 2.5 V CMOS buffers.