Datasheet

2009-12-01Rev. 2.8
Page 7
SPP20N60S5
9 Typ. gate charge
V
GS
= f (Q
Gate
)
parameter: I
D
= 20 A pulsed
0 20 40 60 80
nC
120
Q
Gate
0
2
4
6
8
10
12
V
16
SPP20N60S5
V
GS
0.2 V
DS max
0.8 V
DS max
10 Forward characteristics of body diode
I
F
= f (V
SD
)
parameter: T
j
, tp = 10 µs
0 0.4 0.8 1.2 1.6 2 2.4
V
3
V
SD
-1
10
0
10
1
10
2
10
A
SPP20N60S5
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)
11 Avalanche SOA
I
AR
= f (t
AR
)
par.:
T
j
≤ 150 °C
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
µs
t
AR
0
5
10
A
20
I
AR
T
j
(START)
=25°C
T
j
(START)
=125°C
12 Avalanche energy
E
AS
= f (T
j
)
par.: I
D
= 10 A, V
DD
= 50 V
20 40 60 80 100 120
°C
160
T
j
0
50
100
150
200
250
300
350
400
450
500
550
600
mJ
750
E
AS