Datasheet

2009-12-01Rev. 2.8
Page 2
SPP20N60S5
Maximum Ratings
Parameter
Symbol Value Unit
Drain Source voltage slope
V
DS
= 480 V, I
D
= 20 A, T
j
= 125 °C
dv/dt 20 V/ns
Thermal Characteristics
Parameter
Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case
R
thJC
- - 0.6 K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
R
thJA
-
-
-
35
62
-
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
T
sold
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0V, I
D
=0.25mA 600 - - V
Drain-Source avalanche
breakdown voltage
V
(BR)DS
V
GS
=0V, I
D
=20A - 700 -
Gate threshold voltage V
GS(th)
I
D
=1000µΑ, V
GS
=V
DS
3.5 4.5 5.5
Zero gate voltage drain current I
DSS
V
DS
=600V, V
GS
=0V,
T
j
=25°C,
T
j
=150°C
-
-
0.5
-
5
250
µA
Gate-source leakage current I
GSS
V
GS
=20V, V
DS
=0V - - 100 nA
Drain-source on-state resistance R
DS(on)
V
GS
=10V, I
D
=13A,
T
j
=25°C
T
j
=150°C
-
-
0.16
0.43
0.19
-
Ω
Gate input resistance
R
G
f=1MHz, open Drain - 12 -