Datasheet

7
2000-01-27
SPP11N60S5
SPB11N60S5
Forward characteristics of reverse diode
I
F
= f (V
SD
)
parameter: T
j
, tp = 80 µs
0.0 0.4 0.8 1.2 1.6 2.0 2.4
V
3.0
V
SD
-1
10
0
10
1
10
2
10
A
SPP11N60S5
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)
Typ. gate charge
V
GS
= f ( Q
Gate
)
parameter: I
D
= 11 A pulsed
0 10 20 30 40 50
nC
65
Q
g
0
2
4
6
8
10
12
V
16
SPP11N60S5
V
GS
DS max
V
0,8
DS max
V
0,2