Datasheet

6
2000-01-27
SPP11N60S5
SPB11N60S5
Avalanche energy
E
AS
= f ( T
j
)
par.: I
D
=5.5A, V
DD
=50V
20 40 60 80 100 120
°C
160
T
j
0
50
100
150
200
250
mJ
350
E
AS
Avalanche SOA
I
AR
= f ( t
AR
)
par.: T
j(START)
= 25 °C, T
j
£ 150 °C
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
µs
t
AR
0
1
2
3
4
5
6
7
8
9
10
11
12
A
14
I
AR
Drain-source breakdown voltage
V
(BR)DSS
= f ( T
j
)
-60 -20 20 60 100
°C
180
T
j
540
560
580
600
620
640
660
680
V
720
SPP11N60S5
V
(BR)DSS
Gate threshold voltage
V
GS(th)
= f ( T
j
)
parameter: V
GS
= V
DS
, I
D
= 0.5 mA
-60 -20 20 60 100
°C
180
T
j
0
1
2
3
4
5
V
7
V
GS(th)
typ.
98%
2%