Datasheet

3
2000-01-27
SPP11N60S5
SPB11N60S5
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Uni
t
min. typ. max.
Dynamic Characteristics
Transconductance g
fs
V
DS
³ 2* I
D
* R
DS(on)max
,
I
D
=7A
- 6 - S
Input capacitance C
iss
V
GS
=0V, V
DS
=25V,
f =1MHz
- 1460 - pF
Output capacitance C
oss
- 610 -
Reverse transfer capacitance C
rss
- 21 -
Turn-on delay time t
d(on)
V
DD
=350V, V
GS
=10V,
I
D
=11A, R
G
=6.8 W
- 130 - ns
Rise time t
r
- 35 -
Turn-off delay time t
d(off)
- 150 225
Fall time t
f
- 20 30
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=350V, I
D
=11A - 10.5 - nC
Gate to drain charge Q
gd
- 24 -
Total gate charge Q
g
V
DD
=350V, I
D
=11A,
V
GS
=0 to 10V
- 41.5 54
Reverse Diode
Inverse diode continuous
forward current
I
S
T
C
=25°C - - 11 A
Inverse diode direct
current,pulsed
I
SM
- - 22
Inverse diode forward voltage V
SD
V
GS
=0V, I
F
=11A - 1 1.2 V
Reverse recovery time t
rr
V
R
=350V, I
F
=
l
S
,
d
i
F
/d t =100A/µs
- 650 1105 ns
Reverse recovery charge Q
rr
- 7.9 - µC