Datasheet

2
2000-01-27
SPP11N60S5
SPB11N60S5
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Thermal Characteristics
Thermal resistance, junction - case R
thJC
- - 1 K/W
Thermal resistance, junction - ambient
(Leaded and through-hole packages)
R
thJA
- - 62
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
R
thJA
-
-
-
35
62
-
Static Characteristics, at T
j
= 25 °C, unless otherwise specified
Drain-source breakdown voltage
V
GS
= 0 V, I
D
= 0.25 mA
V
(BR)DSS
600 - - V
Gate threshold voltage, V
GS
= V
DS
I
D
= 0.5 mA, T
j
= 25 °C
V
GS(th)
3.5 4.5 5.5
Zero gate voltage drain current, V
DS
= V
DSS
V
GS
= 0 V, T
j
= 25 °C
V
GS
= 0 V, T
j
= 150 °C
I
DSS
-
-
-
-
25
250
µA
Gate-source leakage current
V
GS
= 20 V, V
DS
= 0 V
I
GSS
- - 100 nA
Drain-source on-state resistance
V
GS
= 10 V, I
D
= 7 A
R
DS(on)
- 0.34 0.38
W
1
current limited by T
jmax
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.