Datasheet

1
2000-01-27
SPP11N60S5
SPB11N60S5
Cool MOS Power-Transistor
· New revolutionary high voltage technology
· Ultra low gate charge
· Periodic avalanche rated
· Extreme d v /d t rated
· Optimized capacitances
· Improved noise immunity
· Former development designation:
SPPx2N60S5/SPBx2N60S5
G,1
D,2
S,3
C
Power Semiconductors
OO
L
MOS
Type V
DS
I
D
R
DS(on)
Package Marking Ordering Code
SPP11N60S5 600 V 11 A
0.38
W
P-TO220-3-1 11N60S5 Q67040-S4198
P-TO263-3-2 11N60S5 Q67040-S4199SPB11N60S5
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
I
D
11
7
A
Pulsed drain current, t
p
= 1ms
1)
T
C
= 25 °C
I
D puls
22
Avalanche energy, single pulse
I
D
= 5.5 A, V
DD
= 50 V
E
AS
340 mJ
Avalanche energy (repetitive, limited by T
jmax
)
I
D
= 13.8 A, V
DD
= 50 V
E
AR
1
Avalanche current (repetitive, limited by T
jmax
) I
AR
13.8 A
Reverse diode d v /d t
I
S
= 11 A, V
DS
< V
DSS
, d i /d t = 100 A/µs,
T
jmax
= 150 °C
d v /d t 6 kV/µs
Gate source voltage V
GS
± 20
V
Power dissipation
T
C
= 25 °C
P
tot
125 W
Operating and storage temperature T
j
, T
stg
-55... +150 °C