Datasheet

SPA06N80C3
9 Typ. gate charge 10 Forward characteristics of reverse diode
V
GS
=f(Q
gate
); I
D
=6 A pulsed I
F
=f(V
SD
); t
p
=10 µs
parameter: V
DD
parameter: T
j
11 Avalanche energy 12 Drain-source breakdown voltage
E
AS
=f(T
j
); I
D
=1.2 A; V
DD
=50 V V
BR(DSS)
=f(T
j
); I
D
=0.25 mA
25 °C
150 °C
150°C (98%)
25°C (98°C)
10
2
10
1
10
0
10
-1
0 0.5 1 1.5 2
V
SD
[V]
I
F
[A]
160 V
640 V
0
2
4
6
8
10
0 10 20 30 40
Q
gate
[nC]
V
GS
[V]
680
720
760
800
840
880
920
960
-60 -20 20 60 100 140 180
T
j
[°C]
V
BR(DSS)
[V]
0
50
100
150
200
250
25 50 75 100 125 150
T
j
[°C]
E
AS
[mJ]
Rev. 2.9
1 page 6 2011-09-27