Datasheet

SPA06N80C3
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
C
iss
- 785 - pF
Output capacitance
C
oss
- 33 -
Effective output capacitance, energy
related
6)
C
o(er)
- 26 -
Effective output capacitance, time
related
7)
C
o(tr)
- 69 -
Turn-on delay time
t
d(on)
- 25 - ns
Rise time
t
r
- 15 -
Turn-off delay time
t
d(off)
- 72 -
Fall time
t
f
- 8 -
Gate Charge Characteristics
Gate to source charge
Q
gs
- 4 - nC
Gate to drain charge
Q
gd
- 15 -
Gate charge total
Q
g
- 31 41
Gate plateau voltage
V
plateau
- 5.5 - V
Reverse Diode
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=I
S
=6 A,
T
j
=25 °C
- 1 1.2 V
Reverse recovery time
t
rr
- 520 - ns
Reverse recovery charge
Q
rr
- 5 - µC
Peak reverse recovery current
I
rrm
- 18 - A
6)
C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS.
7)
C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS.
V
R
=400 V, I
F
=I
S
=6 A,
di
F
/dt =100 A/µs
Values
V
GS
=0 V, V
DS
=100 V,
f =1 MHz
V
DD
=400 V,
V
GS
=0/10 V, I
D
=6 A,
R
G
=15 ? , T
j
=25 °C
V
DD
=640 V, I
D
=6 A,
V
GS
=0 to 10 V
V
GS
=0 V, V
DS
=0 V
to 480 V
2)
Limited only by maximum temperature
3)
Pulse width t
p
limited by T
j,max
1)
J-STD20 and JESD22
5)
I
SD
=I
D
, di/dt=400A/µs, V
DClink
= 400V, V
peak
<V
(BR)DSS
, T
j
<T
jmax
, identical low side and high side switch
4)
Repetitive avalanche causes additional power losses that can be calculated as P
AV
=E
AR
*f.
Rev. 2.9
1 page 3 2011-09-27